Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping

Lukashin, V. M.; Пашковский, А. Б.; Журавлев, К. С.; Toropov, A. I.; Lapin, V. G.; Golant, E. I.; Kapralova, A. A.

doi:10.1134/s1063782614050121

Cited by 25 publications

(3 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1) The p-HEMT structures exhibit high power gain, excellent cut-off frequency, low noise, and extremely good dc characteristics suitable for power microwave and high-speed device applications. [2][3][4][5][6][7][8][9] The performance of a device depends on the improvement of sheet electron density and mobility. Much effort has been made to study the enhancement of the electron mobility in the InGaAs-based pseudomorphic channels by employing different structure geometry and doping profiles.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear electron transport in GaAs/InGaAs asymmetric double-quantum-well pseudomorphic high-electron-mobility transistor structure

Mohapatra

Sahu

Panda

et al. 2017

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We analyze the structural-asymmetry-induced nonlinear enhancement of the electron mobility μ in a GaAs/InxGa1−xAs double-quantum-well pseudomorphic high-electron-mobility transistor (p-HEMT). We consider the well widths wi and ws and the doping concentrations ndi and nds in the barriers along the substrate (inverted doping) and surface (surface doping), respectively. We show that for a suitable choice of ws and nds, the variation of wi leads to interesting changes in the occupation of subbands, i.e., first, single-subband, then double-subband, and again, single-subband occupancy. By increasing ndi, the range of double-subband occupancy is enhanced. However, the lowering of μ due to the inter-subband effects is minimized. In the case of a single-channel HEMT, i.e., say, for ndi = 0, only a single subband is occupied. The mobility exhibits a cusplike behavior with a minimum at a certain value of wi. If one takes a higher value of nds, the occupation of subbands shows a different trend, i.e., from single- to double-subband occupancy as a function of wi for different ndi values with nonmonotonic variations of μ. Our results of the nonlinear enhancement of mobility can be utilized for the analysis of the coupled GaAs/InxGa1−xAs double-quantum-well p-HEMT structure.

show abstract

Section: Introductionmentioning

confidence: 99%

Nonlinear electron transport in GaAs/InGaAs asymmetric double-quantum-well pseudomorphic high-electron-mobility transistor structure

Mohapatra

Sahu

Panda

et al. 2017

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…To date, there have been several approaches to decreasing the size of these elements. One approach is the growth of thin film devices (Volovich, 2006; Kerentsev and Lanin, 2008; Ageev et al , 2009; Volokobinskaya et al , 2001; Yu et al , 2014; Cho et al , 2014) another is the diffusion or ion doping of homogenous samples, or heterostructures, and still another is the laser or ion doping of the dopant and/or radiation defects (Ong et al , 2006; Wang et al , 2006; Bykov et al , 2003; Svintsov et al , 2013; Alexandrov et al , 2013; Lukashin et al , 2014). The inhomogeneous distribution of temperature can be obtained in the doped inhomogeneity of the structure while will then lead to a decreasing number of dimensions within the considered devices.…”

Section: Introductionmentioning

confidence: 99%

An analytical approach for analysis and optimization of formation of field-effect heterotransistors

Pankratov¹,

Bulaeva²

2016

MMMS

View full text Add to dashboard Cite

Purpose The purpose of this paper is to analyze and optimize the formation of field-effect heterotransistors using analytical approach. The approach makes it possible to analyze mass and heat transport in a multilayer structure without cross-linking of solutions on interfaces between layers of the multilayer structure. The optimization makes it possible to decrease dimensions of the heterotransistors and to increase speed of transport of charge carriers during functioning of the transistors. Design/methodology/approach The authors introduce an analytical approach for analysis of mass and heat transport, which makes it possible to take into account at one time varying in space and time parameters of the transports (diffusion coefficient, heat conduction coefficient, etc.) and nonlinearity of processes. The approach enables analysis of mass and heat transport in a multilayer structure without cross-linking of solutions on interfaces between layers of the multilayer structure and optimises the technological process. The optimization means it is possible to decrease dimensions of field-effect heterotransistors. Findings In this paper the authors introduce an approach to manufacture a field-effect heterotransistor with inhomogeneous doping of channel. Some recommendations to optimize technological process to manufacture more compact distribution of concentration of dopant have been formulated. Originality/value The results are original and the paper provides an approach to the manufacture of a field-effect heterotransistor.

show abstract

“…In this case the height of the barriers is approximately comparable with the band-gap value in the AlGaAs of about 1.5 eV, whereas the height of the barriers without such a doping is limited by the band-gap off-set at the AlGaAs/InGaAs heterointerface of 0.3 eV. A new type of AlGaAs/InGaAs heterostructures with donor-acceptor doped barriers (DA-pHEMT) allows us to suppress the parasitic parallel conductivity via the δ-n-layers placed in the barriers and enhance the output power density of the DA-pHEMT transistor [3]. However, the electron mobility in DA-pHEMT heterostructures is lowered by scattering on ionized donors from the broadened δ-sublayers located in the barriers [4].…”

Section: Introductionmentioning

confidence: 99%

The 2DEG mobility enhancement for low- and high-electric fields in a new type of AlGaAs/InGaAs heterostructures with donor-acceptor doping

Protasov

Gulyaev

Bakarov

et al. 2017

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping

Cited by 25 publications

References 10 publications

Nonlinear electron transport in GaAs/InGaAs asymmetric double-quantum-well pseudomorphic high-electron-mobility transistor structure

Nonlinear electron transport in GaAs/InGaAs asymmetric double-quantum-well pseudomorphic high-electron-mobility transistor structure

An analytical approach for analysis and optimization of formation of field-effect heterotransistors

The 2DEG mobility enhancement for low- and high-electric fields in a new type of AlGaAs/InGaAs heterostructures with donor-acceptor doping

Contact Info

Product

Resources

About