A simple phenomenological model for estimating the upsurge in drift velocity of electrons in transistor heterostructures is proposed. This model is based on a self-consistent solution of Schrödinger and Poisson equations and the hydrodynamic system of equations of energy and momentum conservation. It is demonstrated that the conditions in the layer channel of DA-pHEMT structures with additional potential barriers, which are produced by donor–acceptor doping and enhance the localization of hot electrons, are even more conducive to reducing the time of flight of electrons under the gate than those established in heterostructures with deeper quantum wells produced by increasing the conduction band offset at the heterojunction interface.

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