Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications

Talapin, Dmitri V.; Lee, Jong Soo; Kovalenko, Maksym V.; Shevchenko, Elena V.

doi:10.1021/cr900137k

Cited by 3,885 publications

(3,880 citation statements)

References 675 publications

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“…Moreover, because the solution process enables cost‐effective fabrication, the application of NCs as FET channel layer materials has been widely studied, especially for NCs of cadmium and lead chalcogenides 9. Recently, various studies were performed to improve low charge transport ability by overcoming the poor contacts arising from the large interparticle spacing between NCs10 using strategies such as ligand exchange, Lewis base treatment,[[qv: 10b]] or building a superlattice structure 11.…”

Section: Introductionmentioning

confidence: 99%

FeIn₂S₄ Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field‐Effect Transistors

et al. 2018

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An ambipolar channel layer material is required to realize the potential benefits of ambipolar complementary metal–oxide–semiconductor field‐effect transistors, namely their compact and efficient nature, reduced reverse power dissipation, and possible applicability to highly integrated circuits. Here, a ternary metal chalcogenide nanocrystal material, FeIn2S4, is introduced as a solution‐processable ambipolar channel material for field‐effect transistors (FETs). The highest occupied molecular orbital and the lowest unoccupied molecular orbital of the FeIn2S4 nanocrystals are determined to be −5.2 and −3.75 eV, respectively, based upon cyclic voltammetry, X‐ray photoelectron spectroscopy, and diffraction reflectance spectroscopy analyses. An ambipolar FeIn2S4 FET is successfully fabricated with Au electrodes (E F = −5.1 eV), showing both electron mobility (14.96 cm2 V−1 s−1) and hole mobility (9.15 cm2 V−1 s−1) in a single channel layer, with an on/off current ratio of 105. This suggests that FeIn2S4 nanocrystals may be a promising alternative semiconducting material for next‐generation integrated circuit development.

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Section: Introductionmentioning

confidence: 99%

FeIn₂S₄ Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field‐Effect Transistors

et al. 2018

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“…[1][2][3][4] On the other hand, colloidal NCs can be well dispersed in many solvent and deposited to films via low cost process such as spin-casting, dip-coating and printing, and easily mixed with polymers to form hybrid light-absorbing layers with enhanced performance. [5][6][7][8][9] An important parameter in their use is the band gap energy of NCs, which can be tuned by their size, shape and composition.…”

Section: Introductionmentioning

confidence: 99%

Wurtzite Cu2ZnSnSe4 nanocrystals for high-performance organic–inorganic hybrid photodetectors

2012

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Indium-free quaternary chalcogenide, Cu 2 ZnSnSe 4 (CZTSe), has driven much attention for its potential application in photovoltaics and optoelectronics. It is well known that the composition and structure of nanocrystals (NCs) significantly affect their optical and electrical properties. Controllable synthesis of materials with new crystal structures, especially metastable structures, has given impetus to the development of nanomaterials with many new exciting properties and applications. Highquality CZTSe NCs with thermodynamically metastable wurtzite phase and optical band gap of 1.46 eV were herein synthesized via a facile, lost-cost and safe-solution method. The formation mechanism of the wurtzite CZTSe NCs was investigated in detail, which indicates high reaction rate and low surface energy are favorable for the formation of wurtzite structure. The promising application of as-synthesized NCs in photovoltaics and optoelectronics has been demonstrated by the high-performance hybrid photodetector made from CZTSe NCs and P3HT, with an on/off ratio larger than 150.

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“…Although highquality NC synthesis and dispersibility relies on long ligands, these ligands are insulating and prevent strong coupling and charge transport between NCs once assembled in the solid state. Until recently, this has posed a significant challenge to using these colloidal inks as technologically viable electronic materials for devices 12 and integrated circuitry 13 . Advances in ligand chemistry have shown that the original, long ligands used in synthesis can be replaced by shorter inorganic ligands [14][15][16][17] either in solution, and still maintain solution dispersibility and thin-film processability, or in thin-film solids.…”

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confidence: 99%

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors

et al. 2012

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Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from highperformance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm 2 V À 1 s À 1 , current modulation 410 6 and subthreshold swing of 0.28 Vdec À 1 . We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

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Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications

Cited by 3,885 publications

References 675 publications

FeIn₂S₄ Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field‐Effect Transistors

FeIn₂S₄ Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field‐Effect Transistors

Wurtzite Cu2ZnSnSe4 nanocrystals for high-performance organic–inorganic hybrid photodetectors

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors

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Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications

Cited by 3,885 publications

References 675 publications

FeIn2S4 Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field‐Effect Transistors

FeIn2S4 Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field‐Effect Transistors

Wurtzite Cu2ZnSnSe4 nanocrystals for high-performance organic–inorganic hybrid photodetectors

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors

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Product

Resources

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FeIn₂S₄ Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field‐Effect Transistors

FeIn₂S₄ Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field‐Effect Transistors