Prospects of high voltage power ICs on thin SOI

Nakagawa,; Yasuhara,; Omura,; Yamaguchi, Naohito; Ogura,; Matsudai,

doi:10.1109/iedm.1992.307348

Cited by 38 publications

(8 citation statements)

References 2 publications

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“…proven to be successful in many diverse applications from digital CMOS [1] to high voltage power devices [2]. Most recently, thin-film SOI lateral double-diffused MOSFETs (LDMOSFETs) have been explored for use in radio frequency power amplifiers (RF PAs).…”

Section: Ilicon-on-insulator (Soi) Mos Technology Hasmentioning

confidence: 99%

Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

Fiorenza

Alamo

2002

IEEE Trans. Electron Devices

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Abstract-We have simultaneously fabricated RF power LDMOSFETs on thin-film SOI and bulk silicon wafers. This work compares their DC current-voltage ( -), capacitance-voltage ( -), -parameter, and 1.9-GHz load-pull characteristics and explains differences between them. The SOI LDMOSFET performance is shown to be largely similar to the performance of an equivalent bulk silicon LDMOSFET, but there are important differences. The SOI LDMOSFET has moderately lower on-state breakdown voltage due to increased body resistance. It also has significantly improved power-added efficiency due to reduced parasitic pad losses.Index Terms-Power MOSFET, silicon-on-insulator (SOI) technology.

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Section: Ilicon-on-insulator (Soi) Mos Technology Hasmentioning

confidence: 99%

Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

Fiorenza

Alamo

2002

IEEE Trans. Electron Devices

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“…Lateral Insulated Gate Bipolar Transistor (LIGBT) based on SOI is an attractive device for power ICs due to its high input impedance, low on-state voltage drop, and superior isolation [1]- [7]. Reports have shown that LIGBTs with thin SOI substrates achieve faster switching speed than thick SOI counterparts [8] and are easy to manufacture [9].…”

Section: Introductionmentioning

confidence: 99%

An Novel Thin Layer SOI Carrier-Stored Trench LIGBT With Enhanced Emitter Injection

Lin

et al. 2019

IEEE J. Electron Devices Soc.

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An novel thin layer SOI carrier-stored (CS) trench lateral insulated gate bipolar transistor (TLIGBT) with diode-clamped P-shield layer is proposed. The potential of the P-shield layer is clamped by two series-connected diodes. Therefore, the reverse voltage is sustained by the P-shield/Ndrift junction rather than the P-base/CS junction during the off-state. Thus, the doping concentration of the carrier-stored layer (N cs ) can be significantly improved without compromising the breakdown voltage. Hence, an ultra-low on-state voltage drop (V on ) can be obtained. Besides, the two series-connected diodes clamp the drain-to-source voltage of the intrinsic n-MOS in the TLIGBT, which leads to an ultra-low saturation current and improves the short-circuit withstand capability. The simulation results indicate that the turn-off loss (E off ) at V on = 1.37 V is reduced by 28.8% and 21% compared with those of the conventional carrier-stored LIGBT A and LIGBT B, respectively. Moreover, the saturation current density is reduced by over 53.3% and the short circuit withstand time is improved by more than 2 times than those of the conventional and state-of-the-arts.INDEX TERMS LIGBT, on-state voltage drop, saturation current density, turn-off loss, injection enhanced.

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“…1, to obtain a hgh breakdown voltage, deep diffusion layers such as n-offset of HV-NMOS, p-offset of HV-PMOS and deep n-well for self-isolation are needed. On the other hand, the HV-CMOS by using SO1 needs not so deep diffusion layers because the buried Si02 film shares a larger part of the applied voltage between p-substrate and n-offset of HV-NMOS or n-base of HV-PDMOS (2).…”

Section: Hv-nmosmentioning

confidence: 99%

High voltage SOI CMOS IC technology for driving plasma display panels

Kobayashi

Yanagigawa

Yamanaka

et al.

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212)

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We have developed a new High Voltage CMOS (HV-CMOS) IC technology by using 5 p-thick SOI. In this technology, trench isolation and 0.5 pn rule CMOS process are also adopted. We have examined seven series HV-CMOS fabrication processes in the different voltage rating (which the maximum voltage rating was 250 V) and optimized their characteristics respectively. The HV-CMOS IC having full-CMOS type level shifter is suited to low power consumption Color Plasma Display Panel (C-PDP) and hgh-speed switching has been confirmed. The chip size of the devleloped PDP scan driver IC could be reduced by 40 % compared with the conventional one.

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Prospects of high voltage power ICs on thin SOI

Cited by 38 publications

References 2 publications

Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

An Novel Thin Layer SOI Carrier-Stored Trench LIGBT With Enhanced Emitter Injection

High voltage SOI CMOS IC technology for driving plasma display panels

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