Protection and temperature-dependent switching characterization of latest generation 10 kV SiC MOSFETs

Ji, Shiqi; Zheng, Sheng; Zhang, Zheyu; Wang, Fred; Tolbert, Leon M.

doi:10.1109/apec.2017.7930784

Cited by 12 publications

(3 citation statements)

References 9 publications

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“…simulations. Since the dv/dt at turn off increases with higher load current in case of small inductance [19], therefore, the orange curve (L = 27 mH) has the largest overshoot current in Fig. 10, since it has the highest load current in these four cases.…”

Section: Behavioral Modeling With Equivalent Circuitsmentioning

confidence: 96%

Behavioral Modeling and Analysis of Ground Current in Medium-Voltage Inductors

Zhao

Dalal

Jorgensen

et al. 2021

IEEE Trans. Power Electron.

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This letter proposes a behavioral model for analyzing the ground current in medium-voltage (MV) inductors. The impedance between the terminals and the ground connection of inductors is measured by the impedance analyzer, which is capacitive at low frequency. In order to characterize this impedance, a multi-stage paralleled RLC circuit is proposed. An analytical method is further developed to calculate parameters of the proposed equivalent circuit, which enables to predict the timedomain response of the ground current in MV inductors. A digitaltwin of the double-pulse-test setup is developed in LTspice, where the simulated ground currents show good agreements with the experimental measurements.

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Section: Behavioral Modeling With Equivalent Circuitsmentioning

confidence: 96%

Behavioral Modeling and Analysis of Ground Current in Medium-Voltage Inductors

Zhao

Dalal

Jorgensen

et al. 2021

IEEE Trans. Power Electron.

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show abstract

“…It is difficult to achieve fast response time and strong noise immunity simultaneously considering there is a trade-off between them. Some short circuit protection schemes, such as the improved desaturation technique and over-current protection based on integrated current sensor [40], have been proposed for HV SiC MOSFETs. Some efforts to increase the short circuit capability of power semiconductors are also conducted.…”

Section: ) Protectionmentioning

confidence: 99%

Overview of high voltage sic power semiconductor devices: development and application

Zhang

Wang

2017

Trans. Electr. Mach. Syst.

Self Cite

154

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Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has attracted much attention in recent years. This paper overviews the development and status of HV SiC devices. Meanwhile, benefits of HV SiC devices are presented. The technologies and challenges for HV SiC device application in converter design are discussed. The state-of-the-art applications of HV SiC devices are also reviewed. Index Terms-High voltage, SiC power semiconductor devices, SiC-based converter.Recently, the emerging HV SiC devices demonstrate the promising performance in terms of high voltage rating, low specific on-resistance and fast switching speed [56]. This section focuses on the characteristics of HV SiC devices versus their Si counterparts. A. Comparison to SiRecent breakthroughs in wide band gap (WBG) SiC material and fabrication technology have led to the development of high

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“…These devices are only available in bare die form, and recent research has been focused on the development of highvoltage packaging of such devices. Several research teams have investigated and demonstrated the fast switching capabilities of the 10 kV SiC MOSFETs mainly in hard-switched double-pulse tests [21][22][23][24][25], short-circuit characteristics [26][27][28], DC-DC converters [29][30][31][32] and inverter demonstrators with frequencies up to 40 kHz [33][34][35][36][37]. There has not yet been any documented attempts at operating 10-15 kV SiC devices in the MHz range.…”

Section: Introductionmentioning

confidence: 99%

High‐frequency resonant operation of an integrated medium‐voltage SiC MOSFET power module

Jørgensen

Aunsborg

Bęczkowski

et al. 2020

IET Power Electronics

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Industrial processes which use induction and dielectric heating are still relying on resonant converters based on vacuum tubes. New emerging medium-voltage silicon carbide (SiC) semiconductor power devices have a potential to replace vacuum tubes and allow for more efficient and compact converters in the high-frequency range. High-voltage packages have been proposed in the literature that are suitable for the 10 kV SiC metal-oxide-semiconductor field-effect transistors (MOSFETS), and its fast voltage switching capabilities in hard-switched applications have been demonstrated. However, no packaging is presented which allows the high-frequency operation of a 10 kV SiC MOSFET die. This study proposes the design of a power module for MHz resonant operation of a 10 kV SiC MOSFET. At high switching frequencies, the gate losses become substantial, thus the gate driver is included inside the power module package to ensure a low inductive and high thermally conductive design as seen from the gate driver. The inductance of the proposed power module layout structure is evaluated using ANSYS Q3D Extractor. The thermal performance of the integrated gate-driver circuitry is experimentally verified. Finally, the resonant operation of a medium-voltage SiC MOSFET power module is demonstrated experimentally at 1 MHz.

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Protection and temperature-dependent switching characterization of latest generation 10 kV SiC MOSFETs

Cited by 12 publications

References 9 publications

Behavioral Modeling and Analysis of Ground Current in Medium-Voltage Inductors

Behavioral Modeling and Analysis of Ground Current in Medium-Voltage Inductors

Overview of high voltage sic power semiconductor devices: development and application

High‐frequency resonant operation of an integrated medium‐voltage SiC MOSFET power module

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