Proton and electron radiation data and analysis of GaInP<sub>2</sub>/GaAs/Ge solar cells

Sharps, Paul; Aiken, D.; Stan, M. A.; Thang, C.H.; Fatemi, Navid S.

doi:10.1002/pip.444

Cited by 37 publications

(24 citation statements)

References 3 publications

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“…The D d method was developed at the NRL. The motivation for the work was the accurate prediction of a cell's space radiation response based on a limited set of ground-based data (1). The application of the NRL methodology for incident mono-energetic electrons could be summarized as follows:…”

Section: Displacement Damage Dose Methodsmentioning

confidence: 99%

“…Email: ms.arjangmehr@gmail.com cell. Then, the D d is calculated for a particular space radiation environment and the degradation in the electrical properties of a cell is determined for that orbit (1,(5)(6)(7)(8)(9). These techniques provide an opportunity to predict degradation of solar cell's external parameters (e.g.…”

Section: Introductionmentioning

confidence: 99%

“…The prediction of a cell's performance in space is made from groundbased exposure of cells to mono-energetic particles over several energies and fluences (1). Jet Propulsion Laboratory (JPL) and Naval Research Laboratory (NRL) have developed different techniques, which could predict silicon solar cell behavior in space radiation environments, consisting energetic electrons and protons.…”

Section: Introductionmentioning

confidence: 99%

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Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells

Arjhangmehr

Feghhi

2014

Radiation Effects and Defects in Solids

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Solar modules and arrays are the conventional energy resources of space satellites. Outside the earth's atmosphere, solar panels experience abnormal radiation environments and because of incident particles, photovoltaic (PV) parameters degrade. This article tries to analyze the electrical performance of electron and photon-irradiated mono-crystalline silicon (mono-Si) solar cells. PV cells are irradiated by monoenergetic electrons and poly-energetic photons and immediately characterized after the irradiation. The mean degradation of the maximum power (P max ) of silicon solar cells is presented and correlated using the displacement damage dose (D d ) methodology. This method simplifies evaluation of cell performance in space radiation environments and produces a single characteristic curve for P max degradation. Furthermore, complete analysis of the results revealed that the open-circuit voltage (V oc ) and the filling factor of mono-Si cells did not significantly change during the irradiation and were independent of the radiation type and fluence. Moreover, a new technique is developed that adapts the irradiation-induced effects in a single-cell equivalent electrical circuit and adjusts its elements. The "modified circuit" is capable of modeling the "radiation damage" in the electrical behavior of mono-Si solar cells and simplifies the designing of the compensation circuits.

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Section: Displacement Damage Dose Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells

Arjhangmehr

Feghhi

2014

Radiation Effects and Defects in Solids

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“…However, the space is a hazardous environment containing energetic particles, which lead to degradation of the solar cell efficiency and hence, a decrease in the lifetime of satellites. Many radiation experiments have been performed towards the understanding of the changes of electrical parameters related to the degradation of solar cells [1][2][3][4][5][6]. A complementary approach to experiment is to simulate the damage on different materials produced by heavy and light ions.…”

Section: Introductionmentioning

confidence: 99%

Investigation of proton damage in III-V semiconductors by optical spectroscopy

Yaccuzzi

Khachadorian

Suárez

et al. 2016

Journal of Applied Physics

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We studied the damage produced by 2 MeV proton radiation on epitaxially grown InGaP/GaAs structure by means of spatially-resolved Raman and photoluminescence (PL) spectroscopy. The irradiation was performed parallel to the sample surface in order to determine the proton penetration range in both compounds. An increase of the intensity of LO phonons and a decrease of the luminescence were observed. We associate these changes with the the creation of defects in the damage region, also responsible for the observed change of the carrier concentration in the GaAs layer, determined by the shift of the phonon-plasmon coupled mode frequency. From the spatially resolved profile of the PL and phonon intensities, we obtained the proton range in both materials and we compared them with SRIM simulations. The comparison between the experimentally obtained proton range and simulations shows a very good agreement for GaAs but a discrepancy of 20 % for InGaP. This discrepancy can be explained in terms of limitations of the model to simulate the electronic orbitals and bonding structure of the simulated compound. In order to overcome this limitation we propose an increase of 40 % in the electronic stopping power for InGaP.

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“…For tri-junction GaInP/GaAs/Ge solar cells, the degradation is mainly attributed to change of minority carrier lifetime in middle GaAs sub-cells. 23,24 In this paper, we would use TRPL and PL to get K τ of GaAs in a GaInP/GaAs/Ge solar cell.…”

Section: Introductionmentioning

confidence: 99%

Time resolved photoluminescence studies of degradation in GaInP/GaAs/Ge solar cells after 1MeV electron irradiation

Guo

Xiao

et al. 2018

AIP Advances

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Time resolved photoluminescence (TRPL) is a powerful method to character the behaviors of carriers as it has high time resolution that could reflect the reactions of carriers within nanoseconds. For solar cells, minority carrier lifetime is the most important parameter. TRPL has been used to measure the lifetime for uniform materials. However, for homojunction solar cells, doping distribution and carrier drift make the spectroscopy analysis much difficult. Thus one dimension numerical calculations are used to study the time-dependent photoluminescence (TRPL) decay of GaAs sub-cell in GaInP/GaAs/Ge solar cells. Calculation shows that both lifetime of minorities and light intensities could determine the line shape of TRPL. The bimolecular recombination under high injection modifies the curve from single-exponential to non-single-exponential one. For TRPL of homojunction solar cell, the photoluminescence decay process is not synchronized in all parts, and the decay is fast in emitter but slower in base regions. To get the lifetimes of minority carriers after 1MeV electron irradiation, carrier generation parameter G0 should be fitted by numerical method firstly. The damage factor Kτ=4.8×10-15 cm2/ns is fitted from TRPL results. Photoluminescence spectra (PL) are also used to get Kτ=5.5×10-15 cm2/ns which is similar with the value obtained from TRPL.

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Proton and electron radiation data and analysis of GaInP₂/GaAs/Ge solar cells

Cited by 37 publications

References 3 publications

Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells

Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells

Investigation of proton damage in III-V semiconductors by optical spectroscopy

Time resolved photoluminescence studies of degradation in GaInP/GaAs/Ge solar cells after 1MeV electron irradiation

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Proton and electron radiation data and analysis of GaInP2/GaAs/Ge solar cells

Cited by 37 publications

References 3 publications

Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells

Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells

Investigation of proton damage in III-V semiconductors by optical spectroscopy

Time resolved photoluminescence studies of degradation in GaInP/GaAs/Ge solar cells after 1MeV electron irradiation

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Proton and electron radiation data and analysis of GaInP₂/GaAs/Ge solar cells