Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices

Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs

“…Robustness value obtained is confirmed by several works reported in literature [9][10][11][12][13][14][15][16][17]. White et al [11] further provides fruitful discussion about displacement damage effects by means of Catodoluminescence and Secondary Ion Mass Spectrometry.…”

“…DC analysis confirms that InAlN/GaN structures demonstrate a robustness comparable to AlGaN/GaN [9][10][11][12][13][14][15][16][17] and AlN/GaN [22] devices. According to significant repeatability demonstrated, we will provide a preliminary example for a representative device.…”

“…An example is provided by Sonia et al [9] which compares effects due to several particles, namely protons and heavy ions, such as carbon, oxygen, and iron.…”

“…Detailed evaluation has been performed in order to understand the impact of both proton energy [11] and fluence [9][10][11][12][13][14][15][16][17].…”

Proton induced trapping effect on space compatible GaN HEMTs

“…The primary mechanism for degradation of DC and RF characteristics is displacement damage [3][4][5], which can mainly be observed at very high fluences and low proton energies, while high energy irradiation has typically less impact in GaN-HEMT performances [4]. The observed degradation tends to be proportional to the non ionising energy loss, and does not pose a serious risk for most of the typical orbits and shielding configurations, given the high fluences (>10 12 p/cm 2 ) required to observe significant changes in the device characteristics.…”