Proton induced multilevel storage capability in self-assembled indium-zinc-oxide thin-film transistors

Abstract

Multilevel memory capability of self-assembled indium-zinc-oxide (IZO) electric-double-layer (EDL) thin-film transistors gated by nanogranular SiO 2 proton conducting electrolytes is investigated. More than four distinct memory states are obtained by programming gate voltage. The observed multilevel storage behavior is mainly due to the controlled interfacial electrochemical doping of IZO channel by penetrated protons under programmed gate voltages. In addition, such IZO-based EDL transistor multilevel memory exhibits good characteristics of programming/erasing endurance and data retention. Such oxide-based EDL transistors with protoninduced multilevel memory behavior are interesting for low-cost memory and neuromorphic system applications after further properties and size optimization. V C 2013 AIP Publishing LLC.

Excitatory Post-Synaptic Potential Mimicked in Indium-Zinc-Oxide Synaptic Transistors Gated by Methyl Cellulose Solid Electrolyte

“…The IZO synaptic transistor operates in the n-type depletion mode. An anticlockwise hysteresis loop of ~0.2 V is observed, which was mostly due to the mobile protons in the MC solid electrolyte 24. The IZO synaptic transistors exhibit high performances with a large drain current on/off ratio of 2.5 × 10 6 and a small subthreshold swing of 84.5 mV/dec.…”

Low voltage-driven oxide phototransistors with fast recovery, high signal-to-noise ratio, and high responsivity fabricated via a simple defect-generating process

“…In fact, hysteresis has a Janus-faced property. In non-volatile memory devices, permanent hysteresis where the shifted threshold voltage hardly recovers over time can be used as a kind of memory effect and can be reinforced by using ferroelectric gate insulators 25 26 , nanoparticle-embedded gate insulators 27 28 , or electric double layers 29 30 . On the other hand, the volatile (dynamic) hysteresis of TFTs has been regarded as one of the major problems in display applications since it leads to a threshold voltage shift in the positive direction like a positive bias stress (PBS) and thus, unstable operation of the displays.…”

Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics

“…When a high positive (negative) bias is applied on the gate, protons in the SiO 2 electrolyte can penetrate into (out) the IZO channel, which will result in a permanent increment (decrement) in channel conductance due to electrochemical doping. 28,29 In fact, protons were reported to be the effective shallow donors in zinc oxide. 30,31 The ion relaxation process can be described by a stretched-exponential function written as: where F t (t), F o , s and b are the ion concentration, the initial ion concentration, the characteristic relaxation time, and the stretch index, respectively.…”