Proton irradiation of ZnO schottky diodes

Abstract

Zinc oxide is generally considered to be radiation hard, although there are few experimental reports supporting this assertion. In this paper, we present results on the changes in electrical performance of bulk Pt/ZnO Schottky rectifiers exposed to 40-MeV protons at fluences from 5 ϫ 10 9 cm Ϫ2 to 5 ϫ 10 10 cm Ϫ2 . These doses correspond to more than 10 years or 100 years, respectively, in low-earth satellite orbit. The reverse breakdown voltage of the ZnO diodes increased from ϳ3.6 V in unirradiated devices to ϳ4 V after the highest proton dose. The effective barrier height decreased with proton dose, while the diode ideality factor increased from 1.8 to 1.9 for the highest dose. These devices appear promising for both aerospace and terrestrial applications where irradiation hardness is a prerequisite. The main degradation mechanism appears to be creation of recombination centers and traps.

Influence of illumination intensity and temperature on the electrical characteristics of an Al/p-GaAs/In structure prepared by thermal evaporation

“…The R s values of the diode were of order of 10 2 X. The results indicate a certain reduction in carrier density in the depletion region of the rectifier through the introduction of traps and recombination centers associated with illumination effect [32,33]. Fig.…”

Study of the influence of α‐particles irradiation on AlGaAs/GaAs heterojunction structures

“…Figure 5 shows ideality factor vs radiation fluence. A small increase of ideality factor is observed, as radiation fluence increases [2][3][4]8].…”

“…These defects introduce fixed charges, which have the same effect as a charge in the net dopant concentration. Therefore, the semiconductor material, always, becomes more intrinsic as a result of radiation damage [2][3][4][5][6][7][8][9]. In semiconductor and metal-semiconductor junctions, displacement damage affects both the barrier height and space charge region width, the latter by decreasing the potential slope across the depletion region.…”

Al- and Al:In-Doped ZnO Thin Films Deposited by RF Magnetron Sputtering for Spacecraft Charge Mitigation

“…2 ZnO thin films demonstrate electrical and optical properties similar to those of ITO. However, the scarcity and high cost of indium coupled with the amenability to wet chemical etching, radiation hardness, 3 and stability under H + plasma 4 that ZnO demonstrates have further bolstered interest in zinc-based TCO films. ZnO is an intrinsically n-type wide-bandgap (3.3 eV) semiconductor that crystallizes in the wurtzite structure.…”