Proton radiation effects in 0.35 /spl mu/m partially depleted SOI MOSFETs fabricated on UNIBOND

Li, Ying; Niu, Guofu; Cressler, John D.; Patel, J.; Marshall, P.W.; Kim, H.S.; Liu, M.S.T.; Reed, Robert A.; Palmer, Michael

doi:10.1109/tns.2002.805428

Cited by 17 publications

(6 citation statements)

References 15 publications

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“…Therefore, we believe that this new technique using the collector current characteristics of a lateral bipolar transistor can be used to identify radiation-induced charge clearly and probe the radiation damage in these SOI CMOS devices on UNIBOND. While we recognize that the sample size used in this study is small, and thus potentially problematic in resolving the small device parameter changes observed, we point out that very similar behavior in our earlier SOI CMOS investigations were also seen [14], lending support to our present claims.…”

Section: A Front-gate Transistorsupporting

confidence: 86%

“…The threshold voltage is 0.64 V, 0.65 V, and 0.61 V at pre-radiation, after 1.3 and 3 Mrad, respectively. This can be attributed to the combined effects of interface traps (which increases ) and oxide trapped charge (which decreases ) [14]. The shift of the subthreshold characteristics, however, is quite small, because of the thin front gate oxide (8 nm in this case).…”

Section: A Front-gate Transistormentioning

confidence: 89%

“…The devices were fabricated using Honeywell's 0.35 partially depleted SOI technology [14]. The SOI substrate here was formed by UNIBOND.…”

Section: Methodsmentioning

confidence: 99%

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Probing proton damage in SOI CMOS technology by using lateral bipolar action

Niu

Cressler³

et al. 2003

IEEE Trans. Nucl. Sci.

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We investigate proton damage in SOI CMOS devices on UNIBOND using a variety of lateral bipolar operational modes. We show that the impact of interface states and oxide charge can be more clearly observed using lateral bipolar action than by using normal FET operational characteristics. We also investigate the radiation-induced interface states at the Si/buried oxide interface and oxide charges in the buried oxide of this SOI CMOS technology using the DCIV method.

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Section: A Front-gate Transistorsupporting

confidence: 86%

Section: A Front-gate Transistormentioning

confidence: 89%

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Probing proton damage in SOI CMOS technology by using lateral bipolar action

Niu

Cressler³

et al. 2003

IEEE Trans. Nucl. Sci.

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“…The total dose performance of this process has been reported at room temperature [30] and at 77 K [31]. Total dose performance following proton irradiation has been recently reported [32].…”

Section: 35-m Pd Soi Cmos Processmentioning

confidence: 99%

Noise performance of 0.35-/spl mu/m SOI CMOS devices and micropower preamplifier following 63-MeV, 1-mrad (Si) proton irradiation

Binkley

Hopper

Cressler

et al. 2004

IEEE Trans. Nucl. Sci.

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Total dose and single-event radiation hardness, and operation over extreme temperatures make silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) processes leading contenders for space applications. This paper reports noise degradation of 0.35-m partially-depleted SOI CMOS devices and a micropower, low-noise preamplifier following 63-MeV proton irradiation to 1 Mrad (Si). Proton irradiation, relevant for space mission environments, was considered since it induces both ionizing and displacement damage. Preamplifier input-referred white-noise voltage was minimized at low power consumption by operating input devices in moderate inversion for high transconductance efficiency. Flicker-noise, important for gyros and other mission sensors having low-frequency outputs, was minimized by large-area pMOS input devices and careful management of noninput devices. Measured 1-Hz gate-referred, flicker-noise voltage density increased 24 and 32% for pMOS and nMOS test devices respectively following 1 Mrad (Si) irradiation. Measured 1-Hz input-referred noise voltage density increased 22% between a nonirradiated and radiated preamplifier sample, which agrees closely with the 24% increase expected since noise is dominated by pMOS input devices. Device small-signal transconductance and white-noise were largely unchanged while output conductance appeared to increase over a factor-of-three. This suggests a modest design margin is required to maintain flicker noise performance, while substantial design margin may be required to maintain open-loop voltage gain.Index Terms-Analog complementary metal oxide semiconductor (CMOS), flicker noise, micropower, moderate inversion, noise, output conductance, preamplifier, proton irradiation, radiation effects, silicon-on-insulator (SOI), space applications, transconductance efficiency.

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“…The main design goals of the X-PET ™ were low cost, high-sensitivity, high spatial resolution, and large axial field-of-view ͑FOV͒. The use of photomultiplier-quadrant-sharing ͑PQS͒, 6 slabsandwich-slice production technique for building detector blocks more efficiently, 7 in addition to high yield pileup event recovery ͑HYPER͒ method, 8 has fulfilled the main goals. 5 With the widespread availability of different designs of preclinical PET scanners in both academic and corporate settings, the need emerged for adopting a set of protocols and standards for their performance characterization.…”

Section: Introductionmentioning

confidence: 99%

Accurate Monte Carlo modeling and performance assessment of the X‐PET^™ subsystem of the FLEX Triumph^™ preclinical PET/CT scanner

Zeraatkar

Ay²,

Kamali-Asl

et al. 2011

Medical Physics

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Proton radiation effects in 0.35 /spl mu/m partially depleted SOI MOSFETs fabricated on UNIBOND

Cited by 17 publications

References 15 publications

Probing proton damage in SOI CMOS technology by using lateral bipolar action

Probing proton damage in SOI CMOS technology by using lateral bipolar action

Noise performance of 0.35-/spl mu/m SOI CMOS devices and micropower preamplifier following 63-MeV, 1-mrad (Si) proton irradiation

Accurate Monte Carlo modeling and performance assessment of the X‐PET^™ subsystem of the FLEX Triumph^™ preclinical PET/CT scanner

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Proton radiation effects in 0.35 /spl mu/m partially depleted SOI MOSFETs fabricated on UNIBOND

Cited by 17 publications

References 15 publications

Probing proton damage in SOI CMOS technology by using lateral bipolar action

Probing proton damage in SOI CMOS technology by using lateral bipolar action

Noise performance of 0.35-/spl mu/m SOI CMOS devices and micropower preamplifier following 63-MeV, 1-mrad (Si) proton irradiation

Accurate Monte Carlo modeling and performance assessment of the X‐PET™ subsystem of the FLEX Triumph™ preclinical PET/CT scanner

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Accurate Monte Carlo modeling and performance assessment of the X‐PET^™ subsystem of the FLEX Triumph^™ preclinical PET/CT scanner