Pseudo-CMOS: A Design Style for Low-Cost and Robust Flexible Electronics

Huang, Tsung-Ching; Fukuda, Kenjiro; Lo, Chun-Ming; Yeh, Yung‐Hui; Sekitani, Tsuyoshi; Someya, Takao; Cheng, Kwang-Ting

doi:10.1109/ted.2010.2088127

Cited by 227 publications

(146 citation statements)

References 26 publications

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“…The small variation in device parameters and large-scale uniformity of our solution-processed NC-FETs enabled functional NCIC circuits for both analogue and digital applications. Recent demonstrations of more sophisticated pseudo-complementary metal-oxide semiconductor circuits based on unipolar devices may be applied to improve the performance of these flexible NCICs 39 . With continued advances in NC ligand chemistry and doping, this class of solution-processable materials promises to grow beyond unipolar circuits to complementary metal-oxide semiconductor-based NCICs constructed from high-performance n-and p-type NC-FETs from the wide range of available colloidal NC ink chemistries.…”

Section: Discussionmentioning

confidence: 99%

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors

et al. 2012

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Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from highperformance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm 2 V À 1 s À 1 , current modulation 410 6 and subthreshold swing of 0.28 Vdec À 1 . We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

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Section: Discussionmentioning

confidence: 99%

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors

et al. 2012

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“…The expression for switching voltage Vm is thus obtained for a short channel CMOS inverter in 45nm as equation (2) [19], [21], [22], [30].…”

Section: Fig2 Sis Comparatormentioning

confidence: 99%

Design of 45nm Switched Inverter Scheme (SIS) ADCs for Low Power and High Speed Applications

Sunaniya¹,

Khare²

2013

IJCA

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The Analog to Digital converters (ADC) play a very important role in today's world of electronic systems. The requirement of present applications demands high speed, low power dissipation, minimum area, low noise and application specific resolution. Out of the various types of ADCs available the flash ADC is most popular for its highest conversion rate and its wide applications. On the down side the flash ADC dissipates high power due to the presence of resistance ladder. The power dissipation further increases with increase in resolution. In this research two different approaches are presented which eliminates the resistor ladder completely and hence reduce the power demand drastically. The first approach is Switched Inverter Scheme (SIS) ADC; it is realized for 3 bits using 7 comparator circuits of varying size in CMOS 45nm technology with Predictive Technology Model (PTM). The test result obtained indicates an offset error of 0.014 LSB. The full scale error is of -0.112LSB. The gain error is of 0.07 LSB, actual full scale range of 0.49V, worst case DNL & INL each of -0.3V. The power dissipation for the SIS ADC is 207.987 µwatts; Power delay product (PDP) is 415.9 fWs, and the area overhead is 1.89µm 2 . The second approach is Sleep transistor SIS ADC. This approach shows 71% improvement in power dissipation. Whereas PDP is found to be 107.3 fWs and area overhead is 1.94 µm2 for Sleep transistor SIS ADC.

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“…[1][2][3][4] These characteristics motivate the development of large-area, transparent flexible displays, 5 thermal and pressure sensor networks, 6 and complementary metal oxide semiconductor (CMOS)-like technology on foil-based substrates. 7 For neuronal recordings, field-effect transistors have advantages over microelectrode arrays (MEA) as they provide a higher signal to noise ratio. 8 Extracellular and intracellular recordings have been demonstrated using organic thin film transistors.…”

Section: Introductionmentioning

confidence: 99%

Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution

Gupta

Lacour

2016

Journal of Elec Materi

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Transistors are often envisioned as alternative transducing devices to microelectrodes to communicate with the nervous system. Independently of the selected technology, the transistors should have reliable performance when exposed to physiological conditions (37°C, 5% CO 2 ). Here, we report on the reliable performance of parylene encapsulated indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) after prolonged exposure to phosphate buffer saline solution in an incubator. The encapsulated IGZO TFTs (W/ L = 500 lm/20 lm) have an ON/OFF current ratio of 10 7 and field effect mobility of 8.05 ± 0.78 cm 2 /Vs. The transistors operate within 4 V; their threshold voltages and subthreshold slope are $1.9 V and 200 mV/decade, respectively. After weeks immersed in saline solution and at 37°C, we did not observe any significant deterioration in the transistors' performance. The long-term stability of IGZO transistors at physiological conditions is a promising result in the direction of metal oxide bioelectronics.

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Pseudo-CMOS: A Design Style for Low-Cost and Robust Flexible Electronics

Cited by 227 publications

References 26 publications

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors

Design of 45nm Switched Inverter Scheme (SIS) ADCs for Low Power and High Speed Applications

Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution

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