Pseudomorphic SiC alloys formed by Ge ion implantation

Dashiell, M. W.; Xuan, G.; Ansorge, E.; Zhang, X.; Kolodzey, J.; DeSalvo, G.; Gigante, J. R.; Malkowski, W. J.; Clarke, R.C.; Liu, J.; Skowroński, Marek

doi:10.1063/1.1791741

Cited by 10 publications

(10 citation statements)

References 12 publications

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“…It allows only partial recovery of the implantation generated defects [61,62]. Ge clusters formation was sometimes reported [66,68] though in most cases the resulting material was strained SiGeC alloy [63]. The strain is generated by the incorporation of big Ge atoms on SiC lattice sites.…”

Section: Increasing Ge Incorporationmentioning

confidence: 99%

Growth and doping of silicon carbide with germanium: a review

Ferro

2021

Critical Reviews in Solid State and Materials Sciences

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This paper review the research works made so far in associating Ge isoelectronic element to SiC crystals, either by incorporating it inside SiC matrix or for assisting SiC epitaxial growth. The incorporation mechanism and level of incorporation of Ge in SiC during crystal growth with different techniques (sublimation, chemical vapor deposition, vapor-liquid-solid) are compared and discussed. Ge doping level as high as 2-3x10 20 at.cm -3 can be reached without affecting SiC crystalline quality but generating some strain. Higher Ge incorporation levels up to few at% can be reached using farer-toequilibrium conditions such as ion implantation or molecular beam epitaxy. The former allows retaining 4H-SiC polytype while the latter leads exclusively to defective 3C-SiC polytype. Adding Ge to SiC crystal growth was also used for promoting 3C-SiC heteroepitaxy on Si and on -SiC substrates, the latter case being more successful. The reported modifications and improvements of SiC crystalline and electronic properties by the incorporation of Ge element are discussed in order to draw or clearer picture of SiC:Ge material. Based on such discussion, some short-and long-term perspectives are proposed 1-IntroductionThe development of any semiconductor based technology requires mastering and understanding a high number of fabrication steps which can be very complex. On material aspect, crystalline quality and purity are essential. The former allows reaching the predicted properties of the material while the latter allows working on the intentional doping type and level of the semiconductor. The n and p type doping elements are usually well identified for each semiconductor and their incorporations using different elaboration techniques are widely documented. The incorporation of metallic impurities is also commonly investigated for improving the semiconductor properties such as increasing resistivity (Fe in GaN [1], V in 4H-SiC [2]), tuning optical emission (Er in GaN [3] or Si [4]) or providing magnetic properties (Mn in GaAs [5] or Ge [6]). Isoelectronic (also named isovalent) doping is similarly frequent in the case of binary (III-V or II-VI) semiconductor compounds due to the usual important miscibility between elements of the same column and/or valence. It can lead to bandgap tuning [7,8], obtaining of new properties [9,10] or crystalline improvement [11,12].In the particular cases of column IVB semiconductors, the isoelectronic doping concerns only elements of the same column which reduces substantially the possibilities. Important solubility exists

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Section: Increasing Ge Incorporationmentioning

confidence: 99%

Growth and doping of silicon carbide with germanium: a review

Ferro

2021

Critical Reviews in Solid State and Materials Sciences

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“…Thus, Ge impurity is more like Al or N and does not generate easily crystal defects during growth of 4H-SiC. One can still expect some strain because of Ge presence and its replacement of Si atom [25]. However, high resolution XRD is needed to confirm this hypothesis.…”

Section: Ge Impact On Layer Qualitymentioning

confidence: 99%

Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition

et al. 2014

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“…Ge-ion implantation in SiC is of interest for fundamental damage studies [1][2][3] and hetero-junction device applications [4]. For instance, a thin Ge-implanted layer has already been used as base for hetero-structure bipolar transistors [5].…”

Section: Introductionmentioning

confidence: 99%

SIMS Investigation of Ge<sub>x</sub>(4H-SiC)<sub>1-x</sub> Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2

Peyre

Pezoldt

Voelskow³

et al. 2009

MSF

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A detailed investigation of the Ge concentration in implanted samples has been carried out by SIMS and the effects affecting the depth distribution and measurement results have been determined. It is found that the MCs+ SIMS technique is best suited to investigate Gex(4H-SiC)1-x solid solutions up to x=0.2, while the O2+ SIMS configuration is limited to x=0.1. The Ge concentrations obtained by SIMS are very close to the nominal values. On the opposite, performing a comparison with previous RBS data, we find that the RBS values are systematically underestimated by ~30%. Finally, at very high dose, we find that some of the implanted species are lost by recoil and sputtering effects.

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Pseudomorphic SiC alloys formed by Ge ion implantation

Cited by 10 publications

References 12 publications

Growth and doping of silicon carbide with germanium: a review

Growth and doping of silicon carbide with germanium: a review

Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition

SIMS Investigation of Ge<sub>x</sub>(4H-SiC)<sub>1-x</sub> Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2

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