2010
DOI: 10.1007/s00339-010-5973-9
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Pulsed laser deposition of ZnO grown on glass substrates for realizing high-performance thin-film transistors

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Cited by 21 publications
(13 citation statements)
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“…Up to now, 1D ZnO nanostructures can be obtained by many methods such as chemical vapor deposition (CVD) [21], pulsed laser deposition (PLD) [22], hydrothermal synthesis [23], and electrochemical deposition [24][25][26]. Compared with synthesis methods mentioned above, which usually require high temperature, high vacuum, catalysts, and high pressure, electrochemical deposition is more attractive, as it does not require all these rigorous conditions and complex operation and can be operated at low processing temperature in a few minutes or hours.…”
Section: Introductionmentioning
confidence: 99%
“…Up to now, 1D ZnO nanostructures can be obtained by many methods such as chemical vapor deposition (CVD) [21], pulsed laser deposition (PLD) [22], hydrothermal synthesis [23], and electrochemical deposition [24][25][26]. Compared with synthesis methods mentioned above, which usually require high temperature, high vacuum, catalysts, and high pressure, electrochemical deposition is more attractive, as it does not require all these rigorous conditions and complex operation and can be operated at low processing temperature in a few minutes or hours.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the oriented growth of ZnO is not induced by the TiO 2 nanowire array, but is actually a characteristic of the PLD procedure. Thin films of ZnO deposited on various substrates have been reported to be epitaxial with preferred orientation along (002) direction [19][20][21]. In the current investigation, the remarkable orientation along (002) is also achieved on polycrystalline Ti foils.…”
Section: Photocatalytic Activity Evaluationmentioning
confidence: 57%
“…Thus, the deposition rate and the kinetic energy of ejected species background gas molecules and the ablated species. Owing to the different optimum regimes of oxygen pressure and substrate temperature, a two-step buffer layer was deposited at a low pressure or low temperature, and then high temperature [101,102]. This method will reduces the surface roughness ScMgAlO 4 ) with a close lattice match to ZnO can also improve the crystallinity and reduce the defect densities and increase the Hall mobility up to 440 cm 2 [105].…”
Section: Growth Of Zno Thin Filmsmentioning
confidence: 99%