Purification of metallurgical silicon by horizontal zone melting

Mei, Paulo Roberto; Moreira, S.P.; Cardoso, E.; Côrtes, Andresa Deoclídia Soares; Marques, F. C.

doi:10.1016/j.solmat.2011.11.014

Cited by 40 publications

(15 citation statements)

References 9 publications

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“…For refining some refractory metals, like Chromium, Niobium, Silicon, etc., electrical discharge heating is usually preferred because of its high energy density. For examples, an electron beam furnace was used to refine Silicon [41], and hydrogen plasma arc furnace was applied in Chromium refining [42]. The Radiation heating is another heating way to achieve short zone length in zone refining.…”

Section: Design Variants Of Zone Refiningmentioning

confidence: 99%

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Production of High Purity Metals: A Review on Zone Refining Process

Zhang¹,

Friedrich²,

Friedrich³

2018

JCPT

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Purification is a primary application of zone melting, in which the improvement of efficiency, production yield and minimum achievable impurity level are always the research focus due to the increasing demand for high purity metals. This paper has systematically outlined the whole development of related research on zone refining of metals including basic theories, variants of zone refining, parametric optimization, numerical models, and high purity analytical methods. The collection of this information could be of good value to improve the refining efficiency and the production of high purity metals by zone refining.

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Section: Design Variants Of Zone Refiningmentioning

confidence: 99%

“…Silicon [41], 7N Tellurium [7] or 7N Aluminium [22]. The influence of cropping procedure on purification in comparison to the conventional methods is illustrated in Figure 7, taking Al as an example [22].…”

Section: Cropping and Connectingmentioning

confidence: 99%

Production of High Purity Metals: A Review on Zone Refining Process

Zhang¹,

Friedrich²,

Friedrich³

2018

JCPT

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“…The value of molten zone movement velocity amounts rarely to above 2.0 mm/min, according to the most publications; otherwise in the case of too fast processes the purification yield would be significantly decreased. That is also valid for the "non-Germanium" systems such as tellurium, Selenium, cadmium or Silicon [38] [41] [42] [43]. For certain elements like Al, Ga, and P, with distribution coefficient closer to unity, a very difficult segregation of such impurities should be expected, since as shown by Wang et al [39], the removal of such impurities would require extreme low values of growth rate, which is not viable practically.…”

Section: Ultra-purification Of Germaniummentioning

confidence: 99%

High Purity Germanium, a Review on Principle Theories and Technical Production Methodologies

Curtolo¹,

Friedrich²,

Friedrich³

2017

JCPT

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Since the early 1950's the use of Germanium has been continuously growing as new applications are being developed. Its first commercial usage as the main material, from which the semiconductors were made, was later replaced by Silicon. The applications were then shifted to a key component in fiber optics, infrared night vision devices and space solar cells, as well as a polymerization catalyst for polyethylene terephthalate (PET). With the advance development in new technologies, the attentions have been brought back to Germanium due to its excellent semiconductor properties. New applications on the field of high efficiency solar cells, SiGe based chips, LED technologies, etc., are being developed and show a great potential. According to DERA (Deutsche Rohstoffagentur/German Mineral Resources Agency), the demand for Ge will grow considerably by 2030, pushed mostly by the increase in the fiber optics market and advanced materials sector [1]. Therefore, this paper focuses on an overview of the production chain of Germanium, especially from its concentrate up to the single crystal growth of its valuable ultra-pure metallic form to be used in high technological applications.

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“…This technique is widely used to prepare > 99.999 % pure silicon [13,14]. However, it is rarely applied to organic molecules [15] due to their tendency to chemical degradation upon heating.…”

Section: Introductionmentioning

confidence: 99%

Phenanthrene Purification: Comparison of Zone Melting and Co‐Crystallization

Burel¹,

Vlieg²,

Mignot³

et al. 2016

Chem Eng & Technol

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The purification of phenanthrene is a prerequisite before studying its solid-solid phase transition at the molecular scale. Two purification methods, namely, zone melting and co-crystallization with 3,5-dinitrobenzoic acid, were separately studied and compared, in view of reaching ultrapurity which means a purity of > 99.9 mol %. An explanation of the relationship between the efficiency of both techniques by using phase diagrams has been attempted. A novel strategy is proposed to optimize phenanthrene ultrapurification based on a combination of the two methods.

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Purification of metallurgical silicon by horizontal zone melting

Cited by 40 publications

References 9 publications

Production of High Purity Metals: A Review on Zone Refining Process

Production of High Purity Metals: A Review on Zone Refining Process

High Purity Germanium, a Review on Principle Theories and Technical Production Methodologies

Phenanthrene Purification: Comparison of Zone Melting and Co‐Crystallization

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