Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

Ooi, Kelvin J. A.; Ng, Doris K. T.; Wang, T.; Chee, A. K. L.; Ng, Shi Ling; Wang, Q.; Ang, L. K.; Agarwal, Anu; Kimerling, Lionel C.; Tan, Dawn T. H.

doi:10.1038/ncomms13878

Cited by 190 publications

(111 citation statements)

References 64 publications

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“…Increasing the relative content of silicon vs nitride yields a silicon-rich nitride film [17]. This is highly relevant for nonlinear optics applications because waveguides fabricated from silicon rich nitride tend to have a higher nonlinear Kerr coefficient [20][21][22]. Lacava et al recently demonstrated that the Kerr coefficient can be enhanced by an order of magnitude in silicon nitride waveguides fabricated via plasma-enhanced chemical vapor deposition (PECVD) by varying the silicon content of the film [21].…”

Section: Introductionmentioning

confidence: 99%

Optical bandgap engineering in nonlinear silicon nitride waveguides

Krückel¹,

Fülöp²,

Ye³

et al. 2017

Opt. Express

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Silicon nitride is a well-established material for photonic devices and integrated circuits. It displays a broad transparency window spanning from the visible to the mid-IR and waveguides can be manufactured with low losses. An absence of nonlinear multi-photon absorption in the erbium lightwave communications band has enabled various nonlinear optic applications in the past decade. Silicon nitride is a dielectric material whose optical and mechanical properties strongly depend on the deposition conditions. In particular, the optical bandgap can be modified with the gas flow ratio during low-pressure chemical vapor deposition (LPCVD). Here we show that this parameter can be controlled in a highly reproducible manner, providing an approach to synthesize the nonlinear Kerr coefficient of the material. This holistic empirical study provides relevant guidelines to optimize the properties of LPCVD silicon nitride waveguides for nonlinear optics applications that rely on the Kerr effect.

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Section: Introductionmentioning

confidence: 99%

Optical bandgap engineering in nonlinear silicon nitride waveguides

Krückel¹,

Fülöp²,

Ye³

et al. 2017

Opt. Express

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“…Applying different pumping schemes, FWM in an integrated platform have been demonstrated for providing various applications, such as signal regeneration [1], wavelength channel conversion [2], and logic operations [3], all of which could be modulation-format transparent and compatible with coherent communications. The quest for all-optical components has naturally targeted materials with extremely large nonlinearity including semiconductors (Si, III-V) [4][5][6], chalcogenide glasses [7] and polymers [8], but also low-loss platforms (silicon dioxide [9] and silicon nitride [10,11]). A lot of efforts have been made to develop nonlinear photonic devices on the silicon platform; even though promising results have been shown, this platform suffers from free-carrier dispersion and absorption through two-photon absorption (TPA) process which leads to a limitation of the operational speed of devices.…”

Section: Introductionmentioning

confidence: 99%

Self-phase modulation and four-wave mixing in a chalcogenide ridge waveguide

Delcourt¹,

Jebali²,

Bodiou³

et al. 2020

Opt. Mater. Express

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Third order optical nonlinear effects relying on the instantaneous Kerr effect are investigated in a straight chalcogenide ridge waveguide. The sample consists of a GeSbSe film deposited on a thermally oxidized silicon substrate. Ridge waveguides were processed using photolithography and dry etching techniques. From a 1.1 cm long integrated GeSbSe device, self-phase modulation with a maximum nonlinear phase shift of 2.02 π for a peak power of 15.8 W and four-wave mixing with an external conversion efficiency of −42.6 dB for a pump power of 28 mW are demonstrated. Experimental results show a good agreement with calculations.

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“…Nevertheless, the strong two-photon absorption (TPA) of silicon at near-infrared wavelengths poses a fundamental limitation to the performance of nonlinear photonic devices in the telecommunications band [5,6]. Other CMOS compatible platforms such as silicon nitride [19,20], high index doped silica glass [21,22], and silicon rich nitride [23,24], have a much weaker TPA and a higher nonlinear figure of merit (FOM), although they still face limitations in terms of nonlinear efficiency due to their lower intrinsic Kerr nonlinearity [5,25].…”

Section: Introductionmentioning

confidence: 99%

Transforming silicon into a high performing in tegrated nonlinear photonics platform by integrati on with 2D graphene oxide films

Moss¹,

Jiao²,

Wu³

et al. 2020

Preprint

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Layered two-dimensional (2D) GO films are integrated with silicon-on-insulator (SOI) nanowire waveguides to experimentally demonstrate an enhanced Kerr nonlinearity, observed through self-phase modulation (SPM). The GO films are integrated with SOI nanowires using a large-area, transfer-free, layer-by-layer coating method that yields precise control of the film thickness. The film placement and coating length are controlled by opening windows in the silica cladding of the SOI nanowires. Owing to the strong mode overlap between the SOI nanowires and the highly nonlinear GO films, the Kerr nonlinearity of the hybrid waveguides is significantly enhanced. Detailed SPM measurements using picosecond optical pulses show significant spectral broadening enhancement for SOI nanowires coated with 2.2-mm-long films of 1−3 layers of GO, and 0.4-mm-long films with 5−20 layers of GO. By fitting the experimental results with theory, the dependence of GO’s <i>n</i><sub>2</sub> on layer number and pulse energy is obtained, showing interesting physical insights and trends of the layered GO films from 2D monolayers to quasi bulk-like behavior. Finally, we show that by coating SOI nanowires with GO films the effective nonlinear parameter of SOI nanowires is increased 16 fold, with the effective nonlinear figure of merit (FOM) increasing by about 20 times to FOM > 5. These results reveal the strong potential of using layered GO films to improve the Kerr nonlinear optical performance of silicon photonic devices.

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Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

Cited by 190 publications

References 64 publications

Optical bandgap engineering in nonlinear silicon nitride waveguides

Optical bandgap engineering in nonlinear silicon nitride waveguides

Self-phase modulation and four-wave mixing in a chalcogenide ridge waveguide

Transforming silicon into a high performing in tegrated nonlinear photonics platform by integrati on with 2D graphene oxide films

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