Pyroelectric infrared image sensors using Si CCD and FET arrays

Togami, Yoshihiro; Okuyama, Masanori; Hamakawa, Yoshihiro; Kimata, Masafumi; Denda, Masahiko

doi:10.1016/0924-4247(94)85014-3

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Infrared Sensor1

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1998

2021

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Cited by 6 publications

(2 citation statements)

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“…The device is shown in Figure 5.11 [24]. The pyroelectric plate is stuck to the CCD by inserting a high-dielectric film in the space between them.…”

Section: Infrared Sensormentioning

confidence: 99%

Sensors and Actuators Using Ferroelectric Thin Films

Okuyama

1999

Sensors Update

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“…The device is shown in Figure 5.11 [24]. The pyroelectric plate is stuck to the CCD by inserting a high-dielectric film in the space between them.…”

Section: Infrared Sensormentioning

confidence: 99%

Sensors and Actuators Using Ferroelectric Thin Films

Okuyama

1999

Sensors Update

Self Cite

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“…Pyroelectric infrared sensors, consisting of a thin film of ferroelectric crystal material sandwiched between two electrodes, produce an electrical voltage (or current) in response to temperature variation and have found widespread use in recent years for many applications, including thermal comfort monitoring, infrared light detection and imaging, fire detection, intruder alarms, body temperature monitoring, and so on [1][2][3][4][5][6][7][8][9][10]. Many studies have reported that the sensitivity of pyroelectric sensors can be improved by reducing heat losses from the sensing elements to the supporting substrate or environment [11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Effect of Substrate-Thickness on Voltage Responsivity of MEMS-Based ZnO Pyroelectric Infrared Sensors

Lee

Lin

et al. 2021

Applied Sciences

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Pyroelectric infrared sensors incorporating suspended zinc oxide (ZnO) pyroelectric films and thermally insulated silicon substrates are fabricated using conventional MEMS-based thin-film deposition, photolithography, and etching techniques. The responsivity of the pyroelectric films is improved through annealing at a temperature of 500 °C for 4 h. The temperature variation and voltage responsivity of the fabricated sensors are evaluated numerically and experimentally for substrate thickness in the range of 1 to 500 μm. The results show that the temperature variation and voltage responsivity both increase with a reducing substrate thickness. For the lowest film thickness of 1 μm, the sensor achieves a voltage sensitivity of 3880 mV/mW at a cutoff frequency of 400 Hz. In general, the results presented in this study provide a useful source of reference for the further development of MEMS-based pyroelectric infrared sensors.

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An integrated pyroelectric infrared sensor with a PZT thin film

Chang

Tang

1998

Sensors and Actuators A: Physical

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Pyroelectric infrared image sensors using Si CCD and FET arrays

Cited by 6 publications

References 10 publications

Sensors and Actuators Using Ferroelectric Thin Films

Sensors and Actuators Using Ferroelectric Thin Films

Effect of Substrate-Thickness on Voltage Responsivity of MEMS-Based ZnO Pyroelectric Infrared Sensors

An integrated pyroelectric infrared sensor with a PZT thin film

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