Q-Band GaN MMIC LNA Using a 0.15&amp;#956;m T-Gate Process

Moyer, H.P.; Kurdoghlian, A.; Micovic, M.; Lee, T.; Hiramoto, R.O.; Zaire, M.J. Be; Nguyen, S.T.; Hashimoto, P.; Schmitz, A.; Milosavljevic, I.; Willadsen, P. J.; Wong, Wei-Ting; Antcliffe, M.; Wetzel, Michael; Hu, Ming

doi:10.1109/csics.2008.26

Cited by 16 publications

(8 citation statements)

References 5 publications

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“…It has a more compact layout since the circuit makes use of only two active devices, and two amplification stages can achieve only limited goals. Finally, [20] shows a design with wider dimensions and good performance; but it has a very high power consumption and is able to manage only signals in Q-band.…”

Section: Results and Measurementsmentioning

confidence: 99%

Analysis and design of a Q/V‐band low‐noise amplifier in GaAs‐based 0.1 µm pHEMT technology

Pantoli

Barigelli

Leuzzi

et al. 2016

IET Microwaves, Antennas & Propagation

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In this study, the design of a monolithic wideband low‐noise amplifier (LNA) is presented and addressed with circuitry and modelling techniques which make it suitable for system integration. Particular emphasis has been dedicated to the interconnections analysis and to the enforcement of the stability characteristics that is usually a crucial point for LNAs. The proposed monolithic microwave integrated circuit (MMIC) amplifier covers the Q/V band showing valuable linear and non‐linear characteristics in the full bandwidth from 40 to 51 GHz. The amplifier has been realised with the new 0.1 µm GaAs pseudomorphic high electron mobility transistor (pHEMT) process provided by UMS Foundry, and it is suitable for radar and space applications. The LNA shows a noise figure <2 dB, a gain of 16 dB with a 1 dB compression point of 5 dBm. The amplifier is matched at both input and output ports, and also the bond wires are taken into account in the design. The integrability characteristics have been validated with measurements in a dedicated Test‐Jig.

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Section: Results and Measurementsmentioning

confidence: 99%

Analysis and design of a Q/V‐band low‐noise amplifier in GaAs‐based 0.1 µm pHEMT technology

Pantoli

Barigelli

Leuzzi

et al. 2016

IET Microwaves, Antennas & Propagation

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show abstract

“…The major concern of the input matching is to minimize the noise figure while sustaining enough power gain. It is well-known that source degeneration technique can meet the goal by making the minimum noise figure point (À opt ) and input conjugate point (À MS ) point close to each other on Smith chart [4]. In this work, two 100-µm microstrip lines are connected to the source of the first-stage transistor.…”

Section: Basic Design Concernmentioning

confidence: 99%

Design of a broadband Ka-band MMIC LNA using deep negative feedback loop

Wang¹,

Chen²,

Liu³

et al. 2018

IEICE Electron. Express

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In this paper, we present a broadband Ka-band LNA using 0.15-µm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. By using bandwidth enhancement techniques and deep negative feedback technology, the LNA achieves relatively broadband performances. The LNA attains 20 dB small signal gain from 25 to 40 GHz and shows a measured noise figure of 2.8 dB from 25 to 40 GHz with 230-mW dc power consumption. The input and output return loss of the LNA is less than 8 dB, which is competitive compared with other published Ka-band LNAs. The size of the chip is 2.5 mm × 1.2 mm.

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“…1) The basic common source (CS) topology [1, 2] offers low NF but moderate gain compared to the other topologies. 2) CS topology with source degenerated with inductor [3,4] offers good trade-off between NF and gain. 3) Self bias topology [5,6] avoids applying the bias at the gate of the HEMT.…”

Section: Introductionmentioning

confidence: 99%

“…Using inductive degeneration 0.15 µm GaAs pHEMT[3] results a low NF of 1.6 at Ka band. High gain of 31 dB achieved with 0.15 µm InGaAs mHEMT[4].…”

mentioning

confidence: 99%

Different LNA Topologies Designed with HEMT Technologies at Ka and Q Bands

2019

IJITEE

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The main drawback of designing LNA with CMOS technology is the high power dissipation. This problem can be overcome by designing LNA with HEMT technology. In this paper we went through several LNA‘s designed with different HEMT technologies from the past few decades. Assessment of different LNA topologies with HEMT technologies around ka and Q band is performed in this paper along with EM simulations of PP1010 unconditionally stable LNA.

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Q-Band GaN MMIC LNA Using a 0.15μm T-Gate Process

Cited by 16 publications

References 5 publications

Analysis and design of a Q/V‐band low‐noise amplifier in GaAs‐based 0.1 µm pHEMT technology

Analysis and design of a Q/V‐band low‐noise amplifier in GaAs‐based 0.1 µm pHEMT technology

Design of a broadband Ka-band MMIC LNA using deep negative feedback loop

Different LNA Topologies Designed with HEMT Technologies at Ka and Q Bands

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