2017
DOI: 10.1002/solr.201700036
|View full text |Cite
|
Sign up to set email alerts
|

Quadruple‐Junction Thin‐Film Silicon Solar Cells Using Four Different Absorber Materials

Abstract: We fabricated and studied quadruple‐junction wide‐gap a‐Si:H/narrow‐gap a‐Si:H/a‐SiGex:H/nc‐Si:H thin‐film silicon solar cells. It is among the first attempts in thin‐film photovoltaics to make a two‐terminal solar cell with four different absorber materials. Several tunnel recombination junctions were tested, and the n‐SiOx:H/p‐SiOx:H structure was proven to be a generic solution for the three pairs of neighboring subcells. The proposed combination of absorbers led to a more reasonable spectral utilization th… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
8
0

Year Published

2017
2017
2024
2024

Publication Types

Select...
5

Relationship

2
3

Authors

Journals

citations
Cited by 7 publications
(8 citation statements)
references
References 31 publications
0
8
0
Order By: Relevance
“…By reducing the light absorption of the top subcell, the middle cell would receive more light, and the multijunction cell would be better current matched. In order to do so, the 150 nm a‐Si:H top absorber can be changed by a higher bandgap a‐Si:H material previously developed, using higher hydrogen dilution and lower temperatures. In addition, the absorber thicknesses had to be reoptimized for the new material.…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations
“…By reducing the light absorption of the top subcell, the middle cell would receive more light, and the multijunction cell would be better current matched. In order to do so, the 150 nm a‐Si:H top absorber can be changed by a higher bandgap a‐Si:H material previously developed, using higher hydrogen dilution and lower temperatures. In addition, the absorber thicknesses had to be reoptimized for the new material.…”
Section: Resultsmentioning
confidence: 99%
“…Water splitting applications are particularly sensitive to the values of open‐circuit voltage ( V oc ) and fill factor ( FF ), in which TRJs play a crucial role. The junction between the a‐Si:H cell and the nc‐Si:H cell have been previously studied . However, the junction between the nc‐Si:H cell and the silicon heterojunction (SHJ) cell is relatively unexplored .…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…They are the single-junction nc-Si:H cell (S), the conventional double-junction a-Si:H/nc-Si:H cell (D), the triple-junction cell with nc-Si:H (TS) or a-SiGe x :H (TG) in the middle subcell, and the quadruple-junction cell with ncSi:H (QS) or a-SiGe x :H (QG) in the third subcell. These structures are chosen for comparison because of their reported use in literature [13,14,29,30] and the different arrangements of the absorber bandgap. This is not an exhaustive list of all reported multijunction configurations, [28,29,31] but sufficiently representative for the purpose of this study.…”
Section: Device Structures and Outlinementioning
confidence: 99%
“…The value was chosen to represent a well-engineered TRJ with a minute amount of voltage drop. [14,28,30,40] The resulted voltage and efficiency are shown in Table 5. Although the loss in voltage linearly increases with the number of TRJ, the loss in efficiency is not as severe when the number of subcells becomes large.…”
Section: Tunnel Recombination Junctionsmentioning
confidence: 99%