Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

Abstract

a b s t r a c tQuantification of Ge in Si 1-x Ge x structures (0.092 ≤ x ≤ 0.78) was carried out by time-of-flight secondary ion mass spectrometry (TOF-SIMS) and electron-gas secondary neutral mass spectrometry (SNMS). A good linear correlati on ( R 2 N 0 . 9 99 7) o f th e i nt e n si ty ra ti os of se c on da ry i on s Ge Cs 2 + /S i Cs 2 + a nd 74 Ge − / 30 S i − a n d p o s t -i o n i z e d s p u t t e r e d n e u t r a l s 70 Ge + / 28 S i + w i th Ge c on ce nt ra ti on wa s ob ta i n e d. T h e c al i b ra ti on da ta w er e us e d f o r quantitative depth profiling of [10 × (12.3 nm Si 0.63 Ge 0.37 /34 nm Si)] structures on Si. Satisfactory compliance of the quantified Ge concentration in SiGe layers with the values obtained by high-resolution X-ray diffraction was revealed for both techniques. SIMS and SNMS experimental profiles were fitted using Hofmann's mixingroughness-information depth (MRI) model. In the case of TOF-SIMS, the quality of the reconstruction was better th a n f or S NM S s i nc e n ot on l y th e pr og re s si n g ro ug he n i ng , b ut a l so th e c ra te r e f f e ct a nd ot he r p ro c e ss e s unaccounted in the MRI simulation could have a significant impact on plasma sputter depth profiling.

Hardness and modulus of elasticity of atomic layer deposited Al2O3-ZrO2 nanolaminates and mixtures

“…The likely reason is the amorphous nature of the thin film. It has been shown before in XRR measurements that ALD alumina has low density in as deposited state and the density increases during post-deposition annealing [14,[29][30][31]. Compared to previously derived densities from XRF and SE measurements, the XRR results coincide in about 5% margin.…”

“…), composition and used methods, carbides can possess hardnesses from 9 to 35 GPa [37][38][39][40][41][42][43]. The higher hardness values are usually obtained at higher temperatures than 300 � C and enable development of harder films (20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30)(31)(32)(33)(34)(35). In this regard, the deposited ALD thin films showed comparable or even higher values [37][38][39].…”

Application of Secondary Ion Mass Spectrometry for Analysis of Decorative Coatings on Fancy Goods Accessories

“…where I m and I i are the intensities of the mass peaks of the matrix and impurity ions (sum of the isotopes), respectively, and C i is the concentration of impurity atoms in the matrix. The RSF method is more suitable for assessing a low concentration of impurities (C i < 1 at.%), but good results were also obtained for Si 1−x Ge x (0.092 ≤ x ≤ 0.78) [11]. We used this method to calculate the concentrations of metals on the surface of the decorative coatings studied.…”