Quantitative secondary ion mass spectrometry analysis of the native oxide on silicon wafers

Yamazaki, Hideyuki; Takahashi, Mamoru

doi:10.1002/(sici)1096-9918(199711)25:12<937::aid-sia327>3.0.co;2-s

Cited by 7 publications

(3 citation statements)

References 18 publications

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“…Under these conditions, eq 1 predicts that variations in the ρ, γ, and/or σ parameters for the chemisorbed ECMPS SAMs will lead to different observed ECMPS SAM θ w values on each substrate. For example, although siloxane (Si−O−Si) and silanol (Si−OH) species populate the surfaces of both fused silica (i.e., SiO 2 ) and Si native oxide (i.e., SiO x , x < 2), differences in their internal silicon oxide structures − will affect the total Si−OH coverage and distributions of the various isolated, vicinal, and geminal Si−OH groups on the surface of each material. ,− ,− For ECMPS, chemisorption can only occur through reaction of its single Si−Cl bond directly with a surface Si−OH species. Consequently, the surface distribution of the various vicinal, isolated, and geminal Si−OH species and differences in their reactivity toward the ECMPS Si−Cl bond, − together with the degree of solvation 29,32 and geometric constraints of the ECMPS molecule itself, ,− will influence ρ for the chemisorbed films.…”

Section: Resultsmentioning

confidence: 99%

Formation of Aromatic Siloxane Self-Assembled Monolayers

et al. 2008

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We describe reproducible protocols for the chemisorption of self-assembled monolayers (SAMs), useful as imaging layers for nanolithography applications, from p-chloromethylphenyltrichlorosilane (CMPS) and 1-(dimethylchlorosilyl)-2-(p,m-chloromethylphenyl)ethane on native oxide Si wafers. Film chemisorption was monitored and characterized using water contact angle, X-ray photoelectron spectroscopy, and ellipsometry measurements. Atomic force microscopy was used to monitor the onset of multilayer deposition for CMPS films, ultimately allowing film macroscopic properties to be correlated with their surface coverage and nanoscale morphologies. Although our results indicate the deposition of moderate coverage, disordered SAMs under our conditions, their quality is sufficient for the fabrication of sub-100-nm-resolution metal features. The significance of our observations on the design of future imaging layers capable of molecular scale resolution in nanolithography applications is briefly discussed.

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Section: Resultsmentioning

confidence: 99%

Formation of Aromatic Siloxane Self-Assembled Monolayers

et al. 2008

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“…Yamazaki and Takahashi found very poor agreement between XPS and encapsulation SIMS over the 0.3-1.0 nm range measured in their study. 16 The oxide thickness on one set of profiles was also determined by measuring the full width at half maximum ͑FWHM͒ of the oxygen profile at the interface. Figure 2 shows an oxygen depth profile from a typical sample highlighting the two different methods of measuring oxide thickness on an encapsulated sample.…”

Section: Sims Measurementsmentioning

confidence: 99%

SiO 2 thickness determination by x-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry

Cole

Shallenberger

Novak

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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As the R p of ion implants steadily decreases an ever-increasing percentage of the implant species lies in the oxide layer and is, therefore, not electrically active. For this reason, it is important to have analytical techniques capable of accurately measuring the thickness of ultrathin oxide layers. A round-robin study was performed on a series of SiO 2 films ranging from 0.3 to 20 nm in order to evaluate the advantages and disadvantages of five commonly used analytical techniques. High-resolution cross-section transmission electron microscopy ͑TEM͒ offers the only true measurement of oxide thickness because no density assumptions are made. In this study, TEM is used as the standard for all the other techniques. X-ray photoelectron spectroscopy and Auger electron spectroscopy offer precise measurements for ultrathin ͑Ͻ3 nm͒ films, but are limited for thicker films ͑Ͼ15 nm͒ due to the exponential decay functions that describe the sampling depth in both techniques. Secondary ion mass spectrometry ͑SIMS͒ has historically been used for characterizing relatively thick films ͑Ͼ10 nm͒ but not for thinner films because of atomic mixing effects. Encapsulating oxides with amorphous silicon prior to performing a SIMS experiment can negate these effects. A comparison of SIMS on encapsulated and as received films is made. Rutherford backscattering is an excellent technique for determining oxide thickness over a wide thickness range by channeling the Si signal from the crystalline substrate and analyzing oxygen from the amorphous oxide. Ellipsometry, being both rapid and low cost, is one of the most widely used techniques capable of accurate measurements on thick films ͑Ͼ10 nm͒.

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“…The magnitude of carbon and fluoride contamination on silicon wafers was estimated by detecting 12 C − and 19 F − negative secondary ions, respectively, which are considered to be fragments of volatile fluorides and hydrocarbons. Since a measurement technique similar to that previously reported 23) was used in this study, only its main points are described here. Prior to the encap/SIMS analyses, the Si wafers were covered with amorphous-silicon (a-Si) films in order to avoid secondary-ion yield changes at the initial stage of sputter depth profiling (the surface transient effects) [25][26][27] and to protect the wafers from additional contamination caused by continued exposure to air.…”

Section: Methodsmentioning

confidence: 99%

Quantitative Secondary Ion Mass Spectrometry Analysis of Carbon and Fluorine Impurities on Silicon Wafers Stored in Polymer Carrier Cases

Yamazaki¹,

Tamaoki

Oohashi

2000

Jpn. J. Appl. Phys.

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We have investigated the carbon and fluoride contaminants on silicon wafers during their storage in quartz-glass boxes equipped with carrier cases made of either polypropylene (PP), polybutylene-terephthalate (PBT), or perfluoroalkoxy polymer (PFA). The adsorbed organic contaminants on the wafer surfaces were identified by time-of-flight secondary-ion mass spectrometry (TOF-SIMS). The concentrations of contaminants on the wafer surface have been measured as a function of wafer storage positions as well as carrier case storage time. For quantitative analyses, secondary-ion mass spectrometry (SIMS) combined with the encapsulation method was employed, and carbon ( 12 C − ) and fluorine ( 19 F − ) ions were detected. It has been found that the amount of adsorbed contaminants on the surface of silicon wafers depend on both the wafer storage conditions and the carrier case materials.

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Quantitative secondary ion mass spectrometry analysis of the native oxide on silicon wafers

Cited by 7 publications

References 18 publications

Formation of Aromatic Siloxane Self-Assembled Monolayers

Formation of Aromatic Siloxane Self-Assembled Monolayers

SiO 2 thickness determination by x-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry

Quantitative Secondary Ion Mass Spectrometry Analysis of Carbon and Fluorine Impurities on Silicon Wafers Stored in Polymer Carrier Cases

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