“…For instance, ultra-thin SiO 2 layers can be slowly dissolved in aqueous solution by hydrolysis, particularly in high ionic strength solution [ 79 , 80 , 81 ]. SiO 2 gate dielectric is also being limited by a drifting effect of the device’s output current, as well as by gradual incorporation of charged ions from the electrolyte [ 82 , 83 , 84 ]. These issues can be overcome by using other materials with high dielectric constants such as Si 3 N 4 ( k = 7.5), Al 2 O 3 ( k = 9), SnO 2 ( k = 9.86), HfO 2 ( k = 25), and T 2 O 5 ( k = 26).…”