Quantized Conduction and High Mobility in Selectively Grown InxGa1–xAs Nanowires

Zota, Cezar B.; Lindgren, David; Wernersson, Lars‐Erik; Lind, Erik

doi:10.1021/acsnano.5b03318

Cited by 27 publications

(33 citation statements)

References 30 publications

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“…Furthermore, it was shown that these transistors operate in the quasi-ballistic regime with a transmission of about 70 %, which was obtained from quantized conductance measurements at 10 K, and was shown to be valid also at room temperature [5]. Here, we performed 1/f and RTS noise measurements on devices with varying gate lengths (Lg = 50-85 nm) and gate widths (W = 27-100 nm).…”

Section: Methods and Resultsmentioning

confidence: 79%

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1/f and RTS noise in InGaAs nanowire MOSFETs

Möhle

Zota²,

Hellenbrand³

et al. 2017

Microelectronic Engineering

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Abstract-Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than mobility fluctuations, as the dominant noise source. The minimum equivalent input gate voltage noise reported here is 80 µm 2 µV 2 /Hz, among the lowest values for III-V FETs, and showing the feasibility of a high-quality, low trap density, high-k gate oxide on InGaAs.

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Section: Methods and Resultsmentioning

confidence: 79%

“…The In0.85Ga0.15As NWs are formed on semi-insulating InP:Fe by selective area MOCVD growth using HSQ as a growth mask [5]. Each device consists of a single nanowire.…”

Section: Device Fabricationmentioning

confidence: 99%

1/f and RTS noise in InGaAs nanowire MOSFETs

Möhle

Zota²,

Hellenbrand³

et al. 2017

Microelectronic Engineering

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“…Each device consists of a single NW. The composition of the NW is In 0.85 Ga 0.15 As, as determined by optical characterization [15]. Fig.…”

Section: Device Fabricationmentioning

confidence: 99%

“…high electron mobility µ e and long mean free path λ [6]. While the relatively low DOS of indium-rich In x Ga 1-x As is predicted to limit I DS in highly scaled devices, compared to competing technologies such as Si and Ge, this may be offset by the gain from the long λ and high µ e of In x Ga 1-x As [15]. Since this technology likely will be implemented in a 3D channel architecture, such as FinFETs or NWFETs, a further question concerns the dependence of λ on the channel dimensions, i.e.…”

Section: Introductionmentioning

confidence: 99%

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InGaAs tri-gate MOSFETs with record on-current

Zota

Lindelöw

Wernersson

et al. 2016

2016 IEEE International Electron Devices Meeting (IEDM)

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Abstract-We demonstrate InGaAs tri-gate MOSFETs with an on-current of I ON = 650 µA/µm at V DD = 0.5 V and I OFF = 100 nA/µm, enabled by an inverse subthreshold slope of SS = 66 mV/decade and transconductance of g m = 3 mS/µm, a Qfactor of 45. This is the highest reported I ON for both Si-based and III-V MOSFETs. These results continue to push III-V MOSFET experimental performance towards its theoretical limit. We find an improvement in SS from 81 to 75 mV/dec. as the effective oxide thickness (EOT) is scaled down from 1.4 to 1 nm, as well as improvements in SS, g d and DIBL from reducing the nanowire width. We also find that electron mobility remains constant as the width is scaled to 18 nm.

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Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures

Cheng,

Meng,

Luo

et al. 2024

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The strategic integration of low‐dimensional InAs‐based materials and emerging van der Waals systems is advancing in various scientific fields, including electronics, optics, and magnetics. With their unique properties, these InAs‐based van der Waals materials and devices promise further miniaturization of semiconductor devices in line with Moore's Law. However, progress in this area lags behind other 2D materials like graphene and boron nitride. Challenges include synthesizing pure crystalline phase InAs nanostructures and single‐atomic‐layer 2D InAs films, both vital for advanced van der Waals heterostructures. Also, diverse surface state effects on InAs‐based van der Waals devices complicate their performance evaluation. This review discusses the experimental advances in the van der Waals epitaxy of InAs‐based materials and the working principles of InAs‐based van der Waals devices. Theoretical achievements in understanding and guiding the design of InAs‐based van der Waals systems are highlighted. Focusing on advancing novel selective area growth and remote epitaxy, exploring multi‐functional applications, and incorporating deep learning into first‐principles calculations are proposed. These initiatives aim to overcome existing bottlenecks and accelerate transformative advancements in integrating InAs and van der Waals heterostructures.

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Quantized Conduction and High Mobility in Selectively Grown In_xGa_1–xAs Nanowires

Cited by 27 publications

References 30 publications

1/f and RTS noise in InGaAs nanowire MOSFETs

1/f and RTS noise in InGaAs nanowire MOSFETs

InGaAs tri-gate MOSFETs with record on-current

Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures

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