Quantum Dot-Based Thin-Film III–V Solar Cells

Cappelluti, Federica; Tukiainen, Antti; Aho, Timo; Elsehrawy, Farid; Gruginskie, Natasha; Eerden, Maarten van; Bissels, G.M.M.W.; Tibaldi, Alberto; Bauhuis, G.J.; Mulder, P.; Khalili, Arastoo; Vlieg, Elias; Schermer, J.J.; Guina, Mircea

doi:10.1007/978-3-030-35813-6_1

Cited by 4 publications

(7 citation statements)

References 137 publications

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“…Clustering allows us to study the environment that extragalactic sources live in (e.g. Miyaji et al 2011;Cappelluti et al 2012;Krumpe et al 2018). Thus, comparing the environment of AGN that have different SBMH characteristics and/or live in galaxies with different properties can put constraints on how AGN and galaxies interact and co-evolve (e.g.…”

Section: Introductionmentioning

confidence: 99%

The dependence of the X-ray AGN clustering on the properties of the host galaxy

Mountrichas

Georgakakis

Georgantopoulos

2018

Monthly Notices of the Royal Astronomical Society

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We study the clustering dependence of X-ray AGN and normal galaxies on the stellar mass (M ), star-formation rate (SFR) and specific star-formation rate (sSFR) of the (host) galaxy. Towards this end, we use 407 X-ray AGN from the XMM-XXL survey (∼ 25 deg 2 in the North) and ∼ 45, 000 galaxies in the VIPERS field (W1: ∼16 deg 2 ). We match the AGN and galaxy samples to have the same M , SFR and redshift distributions. Based on our results, the two populations live in DMHs with similar mass (log M/(M h −1 ) ≈ 12.8) and have similar dependence on the galaxy properties. Specifically, our measurements show a positive dependence of the AGN and galaxy clustering on M and a negative dependence on SFR and sSFR. We also find that the X-ray clustering is independent of the location of the host galaxy above or below the star-forming main sequence.

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Section: Introductionmentioning

confidence: 99%

The dependence of the X-ray AGN clustering on the properties of the host galaxy

Mountrichas

Georgakakis

Georgantopoulos

2018

Monthly Notices of the Royal Astronomical Society

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“…In terms of actual devices, having several isolated IBs could help to harvest a broader portion of the sun spectrum. 10,11,31 The formation of QD minibands is suppressed in our samples along the growth direction due to the presence of a single QD layer.…”

Section: Resultsmentioning

confidence: 92%

“…The observation (Figure 3) of well‐isolated excited states in the QD electronic density of states, from the operating principle perspective, does not impact on the maximum theoretical efficiency of the IB solar cell. In terms of actual devices, having several isolated IBs could help to harvest a broader portion of the sun spectrum 10,11,31 …”

Section: Resultsmentioning

confidence: 99%

“…The presence of defects in strained structures, like the well‐studied InAs/GaAs materials system, leads to pinning of the Fermi level at the defects states, 9 thus decreasing the open circuit voltage in nanostructured devices. Even in an ideal material without defects, thermal coupling between QD confined states and transport bands causes open circuit voltage reduction 10,11 . Devices with good performance have been realized, but the existence of three independent quasi‐Fermi levels, as required by the IB theory, is not totally clarified in the literature 12–14 …”

Section: Introductionmentioning

confidence: 99%

“…Even in an ideal material without defects, thermal coupling between QD confined states and transport bands causes open circuit voltage reduction. 10,11 Devices with good performance have been realized, but the existence of three independent quasi-Fermi levels, as required by the IB theory, is not totally clarified in the literature. [12][13][14] Most of the research in this field is devoted to the investigation of InAs/GaAs QD solar cells [4][5][6][7][8] : It is indeed a clear advantage to use a well-established growth technique that leads to very high optical quality of the materials.…”

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confidence: 99%

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Enhancing intermediate band solar cell performances through quantum engineering of dot states by droplet epitaxy

Scaccabarozzi

Vichi

Bietti

et al. 2023

Progress in Photovoltaics

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We report the effect of the quantum dot aspect ratio on the sub‐gap absorption properties of GaAs/AlGaAs quantum dot intermediate band solar cells. We have grown AlGaAs solar cells containing GaAs quantum dots made by droplet epitaxy. This technique allows the realization of strain‐free nanostructures with lattice matched materials, enabling the possibility to tune the size, shape, and aspect ratio to engineer the optical and electrical properties of devices. Intermediate band solar cells have been grown with different dot aspect ratio, thus tuning the energy levels of the intermediate band. Here, we show how it is possible to tune the sub‐gap absorption spectrum and the extraction of charge carriers from the intermediate band states by simply changing the aspect ratio of the dots. The tradeoff between thermal and optical extraction is in fact fundamental for the correct functioning of the intermediate band solar cells. The combination of the two effects makes the photonic extraction mechanism from the quantum dots increasingly dominant at room temperature, allowing for a reduction of the open circuit voltage of only 14 mV, compared to the reference cell.

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