Quantum-dot heterostructure lasers

Ledentsov, N. N.; Grundmann, Marius; Heinrichsdorff, F.; Bimberg, D.; Ustinov, V. M.; Zhukov, A. E.; Maximov, M. V.; Alfërov, Zh. I.; Lott, James A.

doi:10.1109/2944.865099

Cited by 182 publications

(77 citation statements)

References 76 publications

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“…Since the emitted light penetrates into the cladding layers to some extent, is larger than the OCL thickness and is larger than the OCL volume . Actually, the electron wave function is also not completely localized within the QD, penetrating into the OCL and hence, in (8)- (10), is somewhat larger than the QD size. Nevertheless, since the material gain is inversely proportional to [29], the volume-wherein an electron is three-dimensionally (3-D) confined-drops out effectively of (10).…”

Section: B Rate Equationsmentioning

confidence: 99%

“…With (8), the ratio in (4) becomes (10) where is the maximum value of the stimulated emission cross-section in a QD averaged over the laser line (given by (22) in [29]). The factor in (10) is the ratio of the volume wherein an electron is confined to the volume wherein a photon is confined.…”

Section: B Rate Equationsmentioning

confidence: 99%

“…where is the cross-section of carrier capture into a QD, is the carrier thermal velocity, is the spontaneous radiative lifetime in a QD given by (8) in [29], is the light velocity in vacuum, is the group index of the dispersive OCL material, is the surface density of QDs, is the QD layer area (the cross-section of the junction), is the QD layer width (the lateral size of the device), is the QD layer length (the cavity length), is the maximum (saturation) value of the modal gain spectrum peak (see [29] and (41) in [30]), is the number of photons in the lasing mode, is the OCL thickness, is the radiative constant for the OCL (given by (10) in [29]), is the injection-current density, is the mirror loss, is the facet reflectivity, and is the modal internal loss [see assumption 6) above].…”

Section: B Rate Equationsmentioning

confidence: 99%

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Internal efficiency of semiconductor lasers with a quantum-confined active region

Asryan

Luryi

Suris

2003

IEEE J. Quantum Electron.

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Abstract-We discuss in detail a new mechanism of nonlinearity of the light-current characteristic (LCC) in heterostructure lasers with reduced-dimensionality active regions, such as quantum wells (QWs), quantum wires (QWRs), and quantum dots (QDs). It arises from: 1) noninstantaneous carrier capture into the quantum-confined active region and 2) nonlinear (in the carrier density) recombination rate outside the active region. Because of 1), the carrier density outside the active region rises with injection current, even above threshold, and because of 2), the useful fraction of current (that ends up as output light) decreases. We derive a universal closed-form expression for the internal differential quantum efficiency int that holds true for QD, QWR, and QW lasers. This expression directly relates the power and threshold characteristics. The key parameter, controlling int and limiting both the output power and the LCC linearity, is the ratio of the threshold values of the recombination current outside the active region to the carrier capture current into the active region. Analysis of the LCC shape is shown to provide a method for revealing the dominant recombination channel outside the active region. A critical dependence of the power characteristics on the laser structure parameters is revealed. While the new mechanism and our formal expressions describing it are universal, we illustrate it by detailed exemplary calculations specific to QD lasers. These calculations suggest a clear path for improvement of their power characteristics. In properly optimized QD lasers, the LCC is linear and the internal quantum efficiency is close to unity up to very high injection-current densities (15 kA/cm 2 ). Output powers in excess of 10 W at int higher than 95% are shown to be attainable in broad-area devices. Our results indicate that QD lasers may possess an advantage for high-power applications.Index Terms-Quantum dots (QDs), quantum wells (QWs), quantum wires (QWRs), semiconductor heterojunctions, semiconductor lasers.

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Section: B Rate Equationsmentioning

confidence: 99%

Section: B Rate Equationsmentioning

confidence: 99%

Section: B Rate Equationsmentioning

confidence: 99%

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Internal efficiency of semiconductor lasers with a quantum-confined active region

Asryan

Luryi

Suris

2003

IEEE J. Quantum Electron.

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“…The QD, which has been widely investigated, has found prominence in biological [28,29], lasing [30][31][32][33][34][35] and coupled optical device [36,37] applications. The properties of emission tunability by varying size [38][39][40], the effect of QD shape, surface passivation and capping layers [41,42], the non-radiative recombination processes [43][44][45] and their respective characterization methods are largely understood.…”

Section: Quantum Dot Array Waveguidesmentioning

confidence: 99%

Nanoscale waveguiding methods

Wang

Lin

2007

Nanoscale Res Lett

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While 32 nm lithography technology is on the horizon for integrated circuit (IC) fabrication, matching the pace for miniaturization with optics has been hampered by the diffraction limit. However, development of nanoscale components and guiding methods is burgeoning through advances in fabrication techniques and materials processing. As waveguiding presents the fundamental issue and cornerstone for ultra-high density photonic ICs, we examine the current state of methods in the field. Namely, plasmonic, metal slot and negative dielectric based waveguides as well as a few sub-micrometer techniques such as nanoribbons, high-index contrast and photonic crystals waveguides are investigated in terms of construction, transmission, and limitations. Furthermore, we discuss in detail quantum dot (QD) arrays as a gain-enabled and flexible means to transmit energy through straight paths and sharp bends. Modeling, fabrication and test results are provided and show that the QD waveguide may be effective as an alternate means to transfer light on sub-diffraction dimensions.

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“…Besides, for all considered VCSEL configurations, an investigation of the impact on their performance of thicknesses and localisations of the high-AlAs-mole-fraction AlGaAs layer containing the oxide aperture (in OC VCSELs) and of the proton-implanted area (in PI VCSELs) will be carried out to optimise their structures. In the analysis, the advanced 1.3-µm In(Ga)As/GaAs quantum-dot (QD) GaAs-based VCSELs [13] designed for optical fibre communication will be used as a typical modern VCSEL example.…”

Section: Introductionmentioning

confidence: 99%

Comparative analysis of lasing performance of oxide-confined and proton-implanted vertical-cavity surface-emitting diode lasers

Sarzała

Piskorski

2010

Appl. Phys. A

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The comprehensive optical-electrical-thermalrecombination self-consistent VCSEL model is used to compare the performance of oxide-confined (OC) and protonimplanted (PI) VCSELs and to optimise their structures. Generally index-guided (IG) OC VCSELs demonstrate lower lasing thresholds whereas both gain-guided (GG) OC and PI ones manifest much better mode selectivity. Therefore, their either low-threshold IG or mode-selective GG versions may be intentionally used for different VCSEL applications. Lasing thresholds of OC IG VCSELs have been found to be very sensitive to the exact localisation of their thin oxide apertures, which should be shifted as close as possible towards the anti-node position. PI VCSELs, on the other hand, are simpler and cheaper in their manufacturing than OC ones. Although lower threshold currents are manifested by PI VCSELs with very thick implanted regions, lower threshold powers are achieved in these devices with much thicker upper unaffected layer used for the radial current flow from the ring contact towards the laser axis. Paradoxically poor thermal properties of PI VCSELs enable lower lasing thresholds of slightly detuned devices. To conclude, cheaper and mode-selective PI VCSELs may be used instead of OC ones in many of their applications provided ambient temperatures and laser outputs are not too high.

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Quantum-dot heterostructure lasers

Cited by 182 publications

References 76 publications

Internal efficiency of semiconductor lasers with a quantum-confined active region

Internal efficiency of semiconductor lasers with a quantum-confined active region

Nanoscale waveguiding methods

Comparative analysis of lasing performance of oxide-confined and proton-implanted vertical-cavity surface-emitting diode lasers

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