Perovskite
quantum dots have been attractive building blocks for
novel photonic devices development, where patterning is usually one
of the most critical steps. We report on the combination of in situ
fabrication and direct laser writing based on a 405 nm nanosecond
laser, which provides an efficient and simple scheme for patterning
perovskite quantum dots during the formation process. The as-fabricated
gamma phase CsPbI3 quantum dots patterns show bright photoluminescence
emission with a quantum yield up to 92%. By varying the key parameters
of the direct laser writing, a minimum line width of 900 nm was achieved.
A light-emitting optical grating with a period of 4 μm was fabricated
and its polarization and structural color characteristics were discussed.
The reported approach offers a route for fabricating patterned perovskite
quantum dots with designed structures for photonic applications including
micro-LED display, anticounterfeiting, and nanolasers.