Quantum Emitter Localization in Layer-Engineered Hexagonal Boron Nitride

Stewart, James C.; Fan, Ye; Danial, John S. H.; Goetz, Alexander; Prasad, Adarsh S.; Burton, Oliver J.; Alexander-Webber, Jack A.; Lee, Steven F.; Skoff, Sarah M.; Babenko, Vitaliy; Hofmann, Stephan

doi:10.1021/acsnano.1c04467

Cited by 40 publications

(39 citation statements)

References 99 publications

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“…[37] 2D materials are strong candidates for present and future computing paradigms, including logic and neuromorphic computing, as shown in Figure 3c. Despite being beyond the scope of this perspective, it is worth noting that 2D materials, including BLG quantum dot (QD), [38] Josephson junctions, [39] and hBN single-photon emitters (SPEs), [40][41][42] have also been used in the field of quantum computing. Nevertheless, applications of 2D materials in the field of electronic devices goes beyond what is shown in Figure 3c.…”

Section: D Materialsmentioning

confidence: 99%

Memristive, Spintronic, and 2D‐Materials‐Based Devices to Improve and Complement Computing Hardware

Joksas

AlMutairi

Lee

et al. 2022

Advanced Intelligent Systems

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In a data-driven economy, virtually all industries benefit from advances in information technology-powerful computing systems are critically important for rapid technological progress. However, this progress might be at risk of slowing down if the discrepancy between the current computing power demands and what the existing technologies can offer is not addressed. Key limitations to improving energy efficiency are the excessive growth of data transfer costs associated with the von Neumann architecture and the fundamental limits of complementary metal-oxide-semiconductor (CMOS) technologies, such as transistors. Herein, three approaches that will likely play an essential role in future computing systems are discussed: memristive electronics, spintronics, and electronics based on 2D materials. The authors present how these technologies may transform conventional digital computers and contribute to the adoption of new paradigms, like neuromorphic computing.

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Section: D Materialsmentioning

confidence: 99%

Memristive, Spintronic, and 2D‐Materials‐Based Devices to Improve and Complement Computing Hardware

Joksas

AlMutairi

Lee

et al. 2022

Advanced Intelligent Systems

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“…[ 20 ] For plenty of V N or C N , these emitters can only exist for several seconds, and the SPE in h‐BN flakes can only be maintained for several hours or days owing to blinking [ 10c,14,21 ] and bleaching. [ 10b,22 ] Although a repumping method has been realized to improve the spectral stability by recovering emitters from the dark state [ 23 ] and an encapsulating approach has been employed to protect SPEs from bleaching in the air, [ 24 ] extending the lifetime of SPEs or creating more stable SPE devices still needs to be addressed primarily and requires multidisciplinary collaboration to provide better solutions.…”

Section: Microstructure Engineering Of H‐bnmentioning

confidence: 99%

“…Thus, efforts, such as substrate‐induced deformation of h‐BN films, nanoindentation of h‐BN flakes on SiO 2 substrates, and monolayer engineering approaches are being devoted to realizing batch fabrication of h‐BN SPE arrays. [ 24,52 ]…”

Section: Scale‐up Fabrication and Applications Of H‐bn Spesmentioning

confidence: 99%

Microstructure Engineering of Hexagonal Boron Nitride for Single‐Photon Emitter Applications

Zhang

Shi

et al. 2022

Advanced Optical Materials

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Single‐photon emitters (SPEs) can play an important role in future quantum optics. Hexagonal boron nitride (h‐BN), a layered insulator (bandgap ≈6 eV), is a promising candidate for next‐generation SPEs because of its chemical and thermal stability and high brightness at room temperature. In this review, the microstructures (atomic defects, deformations, and cavities) of h‐BN are established and their SPE characteristics are analyzed. Recent progress in the synthesis of high‐quality bulk h‐BN, monoisotopic h‐BN, and epitaxial h‐BN films is also demonstrated. Some approaches for achieving SPE arrays are further discussed and the applications of h‐BN SPEs in the quantum field are investigated. The success in the preparation of large‐scale h‐BN and its microstructural engineering provides a promising future in low‐dimensional quantum optics.

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“…We first verified that covering the pristine hBN crystal with a patterned few-layer graphene crystal masks liquid-activated defects, as was observed for other types of hBN defects. 49,50 As shown in Fig. S8, emitters on bare hBN are randomly distributed, but the graphene mask allows for the precise positioning of emitters on the basal plane of hBN in liquid.…”

Section: Integration In Single-digit Nanofluidic Systemsmentioning

confidence: 99%

Liquid-activated quantum emission from native hBN defects for nanofluidic sensing

Ronceray¹,

You²,

Glushkov³

et al. 2022

Preprint

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Nanostructures made of two-dimensional (2D) materials have become the flagship of nanofluidic discoveries in recent years 1,2 .By confining liquids down to a few atomic layers, anomalies in molecular transport 3-5 and structure 6, 7 have been revealed.Currently, only indirect and ensemble averaged techniques have been able to operate in such extreme confinements, as even the smallest molecular fluorophores are too bulky to penetrate state-of-the-art single-digit nanofluidic systems 8 . This strong limitation calls for the development of novel optical approaches allowing for the direct molecular imaging of liquids confined at the nanoscale. Here, we show that native defects present at the surface of hexagonal boron nitride 9 (hBN) -a widely used 2D material -can serve as probes for molecular sensing in liquid, without compromising the atomic smoothness of their host material. We first demonstrate that native surface defects are readily activated through interactions with organic solvents and confirm their quantum emission properties. Vibrational spectra of the emitters suggest that their activation occurs through the chemisorption of carbon-bearing liquid molecules onto native hBN defects. The correlated activation of neighboring defects reveals single-molecule dynamics at the interface, while defect emission spectra offer a direct readout of the local dielectric properties of the liquid medium. We then harvest these effects in atomically smooth slit-shaped van der Waals channels, revealing molecular dynamics and increasing dielectric order under nanometre-scale confinement. Liquid-activated native defects in pristine hBN bridge the gap between solid-state nanophotonics and nanofluidics and open up new avenues for nanoscale sensing and optofluidics. MainFluorescent defect centers in wide band-gap materials like diamond, silicon carbide or boron nitride have received increasing attention in recent years as they allow to probe nanoscale matter through interactions with their dipoles and electron spins 10,11 . In particular, a variety of point defects with energy levels well within the 6 eV band gap of hexagonal boron nitride (hBN) were

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Quantum Emitter Localization in Layer-Engineered Hexagonal Boron Nitride

Cited by 40 publications

References 99 publications

Memristive, Spintronic, and 2D‐Materials‐Based Devices to Improve and Complement Computing Hardware

Memristive, Spintronic, and 2D‐Materials‐Based Devices to Improve and Complement Computing Hardware

Microstructure Engineering of Hexagonal Boron Nitride for Single‐Photon Emitter Applications

Liquid-activated quantum emission from native hBN defects for nanofluidic sensing

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