Quantum interference control of carriers and currents in zinc blende semiconductors based on nonlinear absorption processes

Muniz, Rodrigo A.; Salazar, Cuauhtémoc; Wang, Kai; Cundiff, Steven T.; Sipe, J. E.

doi:10.1103/physrevb.100.075202

Cited by 14 publications

(13 citation statements)

References 49 publications

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“…At intensities higher than 10 9 W cm –2 , one has to carefully calibrate the contributions from the different orders of multiphoton absorption to characterize the functionality. Nevertheless, the unique feature of comparable 2PA and 3PA in GaP at these intensities may be interesting in future applications in quantum devices, where interference between different absorption pathways could be utilized. − In comparison, photocurrents in InGaN are less susceptible to single-photon transitions. As one cannot exclude the presence of impurities in the device, the observation may be specific to the In/Ga composition and the substrate on which it is made.…”

Section: Resultsmentioning

confidence: 99%

In Operando Quantification of Single and Multiphoton Photocurrents in GaP and InGaN Photodetectors with Phase-Modulated Femtosecond Light Pulses

et al. 2023

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Single and multiphoton absorptions in wide band gap semiconductors determine the functionality of photodetectors, lasers, and light-emitting diodes (LEDs). Although electronic structure strongly influences the different orders of multiphoton absorptions in semiconductors, it has not been feasible to quantify their contributions on the functionality of devices. A lack of proper measurement techniques has been the hurdle. Here, we present a simple and sensitive method based on the phase modulation of femtosecond pulses to quantify single-, two-, and three-photon absorptions in GaP and InGaN photodetectors. Our results show that only three-photon absorption contributes to the photocurrent in the InGaN device when excited by femtosecond pulses at 1030 nm. On the other hand, single-, two-, and three-photon absorptions have comparable contributions in the GaP detector. The three contributions have different origins: linear photocurrent is attributed to the absorption by the impurities in the doped regions, two-photon photocurrent is from the phonon-assisted indirect transition from the valence band to the conduction band minimum, and three-photon photocurrent is from the direct transition to the conduction band. We also demonstrate that the method can be applied to image the heterogeneity of multiphoton photocurrent in devices. Our work could be adapted for “in operando” characterization of optoelectronic systems.

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Section: Resultsmentioning

confidence: 99%

In Operando Quantification of Single and Multiphoton Photocurrents in GaP and InGaN Photodetectors with Phase-Modulated Femtosecond Light Pulses

et al. 2023

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“…Consequently, the differences between these processes have been discussed using terahertz time‐domain spectroscopy . Furthermore, higher‐order quantum interferences between two‐ and three‐photon absorption processes have been investigated …”

Section: Coherent Spectroscopy Of Photocurrent and Photoexcited Electmentioning

confidence: 99%

“…Furthermore, all‐optical control of electronic states by multiple pulses is presently considered as one of the most important techniques for quantum information processing . In addition, the quantum interference in photoconductive and photovoltaic processes has also progressed over the past three decades . Photocurrent quantum interference has been investigated by using the interference between electron states prepared via different excitation paths, for example, one‐ and two‐photon excitation processes.…”

Section: Introductionmentioning

confidence: 99%

Quantum Interference Measurements and Their Application to Analysis of Ultrafast Photocarrier Dynamics in Semiconductor Solar Cell Materials

Tahara

Kanemitsu

2019

Adv Quantum Tech

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Quantum interference measurement is a powerful method to analyze electronic dynamics using phase information of optical fields and electronic states during various types of optical excitation processes. This method is particularly useful for accurate measurements of photocarrier generation processes in semiconductor solar cell materials. Two quantum interference methods, namely photocurrent beat spectroscopy and phase‐locked pulses transient absorption spectroscopy, are recently developed to analyze ultrafast photocarrier generation processes. This review describes how these two techniques can be employed to identify electronic states contributing to photon‐to‐current conversion processes in solar cell materials. Two types of states are highlighted: (i) localized levels within the bandgaps of bulk crystals and thin films leading to photocarrier generation, and (ii) exciton complexes in nanocrystals whose ultrafast dynamics directly influence the efficiency of photoabsorption processes. Since quantum interference measurements provide quantum phase information that is not accessible by other conventional methods, they can also be utilized for advanced evaluation and optimization of optoelectronic materials and devices.

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“…Two-color light irradiation is an effective approach for modulation of nonlinear optics [69][70][71][72] with more interesting physics such as quantum interference control (QIC) [73][74][75][76]. In the present work, we study the third-order nonlinear optical process in graphene irradiated by two-color light (with frequency ω 0 , 2ω 0 ), focusing on the ellipticity dependence.…”

Section: Introductionmentioning

confidence: 99%

Ellipticity dependence of the third-order nonlinear optical response of graphene irradiated by two-color lights

Pei¹,

Duan²,

Zhang³

2020

J. Phys.: Condens. Matter

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We theoretically investigate the third-order optical response of graphene irradiated by two-color lights, paying special attention to the quantum interference. Our studies reveal that the interplay between harmonic generation and four-wave mixing leads to unusual nonlinear optical properties with nontrivial ellipticity dependence. It is shown that, unlike the case of monochromatic light with frequency ω 0 (where the intensity of the third order response (I(3ω 0 )) decreases monotonically with the ellipticity and becomes zero for circularly polarized light), I(3ω 0 ) may increase monotonically with the ellipticity, or be nearly independent on the ellipticity. In particular, under suitable condition, there exists an optimal nonzero ellipticity for the highest I(3ω 0 ). Moreover, circularly polarized third-order optical response can be generated. We have found effective methods of modulating the nonlinear optical processes, which may have various applications in optical devices based on two dimensional materials.

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Quantum interference control of carriers and currents in zinc blende semiconductors based on nonlinear absorption processes

Cited by 14 publications

References 49 publications

In Operando Quantification of Single and Multiphoton Photocurrents in GaP and InGaN Photodetectors with Phase-Modulated Femtosecond Light Pulses

In Operando Quantification of Single and Multiphoton Photocurrents in GaP and InGaN Photodetectors with Phase-Modulated Femtosecond Light Pulses

Quantum Interference Measurements and Their Application to Analysis of Ultrafast Photocarrier Dynamics in Semiconductor Solar Cell Materials

Ellipticity dependence of the third-order nonlinear optical response of graphene irradiated by two-color lights

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