Quantum interference in the presence of a metal-to-insulator transition

Pusep, Yu. A.; Arakaki, H.; Souza, C. A. de

doi:10.1103/physrevb.68.205321

Cited by 20 publications

(21 citation statements)

References 23 publications

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“…As it was shown in Ref. 11, in the disordered SL's it corresponds to the Mott's law for variable-range hopping: 12…”

Section: Theorymentioning

confidence: 71%

Anisotropy of quantum interference in disorderedGaAs/Alx
Pusep
¹
,
Ribeiro
²
,
Arakaki
³

et al. 2003
Phys. Rev. B
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The influence of the anisotropic disorder on quantum interference was studied in the intentionally disordered GaAs/Al x Ga 1Ϫx As superlattices. In the case of sufficiently strong disorder the quantum interference exhibited a structural dependence resulting in the anisotropy of the phase-breaking time, which was found shorter in the direction of the disorder. The anisotropy effects were shown stronger in the insulating transport regime than in the metallic one. The weak-localization negative magnetoresistance was used to obtain the vertical coupling constant in the disordered superlattices.

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“…As it was shown in Ref. 11, in the disordered SL's it corresponds to the Mott's law for variable-range hopping: 12…”

Section: Theorymentioning

confidence: 71%

Anisotropy of quantum interference in disorderedGaAs/Alx
Pusep
¹
,
Ribeiro
²
,
Arakaki
³

et al. 2003
Phys. Rev. B
Self Cite
6
0
4
0
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show abstract

“…The data obtained in this SL are given in Table I. Finally, it is worth adding that the weak-field magnetoresistance in the disordered superlattices studied here is due to the quantum interference processes and is not caused by the interaction effects [13]. Therefore, a comparison between the localization lengths of the plasmonlike excitations and the phase-breaking lengths of the noninteracting electrons provides arguments for understanding the influence of the interaction on localization effects.…”

mentioning

confidence: 71%

Coherence of Elementary Excitations in a Disordered Electron System

et al. 2005

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The localization properties of the single-particle and collective electron excitations were investigated in the intentionally disordered GaAs/AlGaAs superlattices by weak-field magnetoresistance and Raman scattering. The localization length of the individual electron was found to be considerably larger than that of the collective excitations. This suggests that the disorder has a weaker effect on the electrons than on their collective motion and that the interaction which gives rise to the collective effects increases localization.

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“…Using the interface roughness height determined by x-ray diffraction, we calculated the length of the interface roughness in the InGaAs/ InP heterostructures as ⌳ = 63 nm, which indeed was found much longer than that in the GaAs/ AlGaAs heterostructures. These results were compared with the mobilities measured in the short-period GaAs/ AlGaAs SLs, 14 in the GaAs/ AlGaAs multiquantum wells, 4,6 and in the single GaAs/ AlAs quantum wells. 3,8 All these data are shown in Fig.…”

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confidence: 99%

Interface roughness in short-period InGaAs∕InP superlattices

Pusep

Gozzo

LaPierre

2008

Applied Physics Letters

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Electron mobility was studied in lattice-matched short-period InGaAs∕InP superlattices as a function of the width of the wells. The decreasing mobility with decreasing well width was shown to occur due to the interface roughness. The roughnesses of InGaAs∕InP and GaAs∕AlGaAs interfaces were compared. Much smoother InGaAs∕InP interfaces resulted in higher electron mobility limited by interface roughness.

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Quantum interference in the presence of a metal-to-insulator transition

Cited by 20 publications

References 23 publications

Anisotropy of quantum interference in disorderedGaAs/Alx
Pusep
¹
,
Ribeiro
²
,
Arakaki
³

et al. 2003
Phys. Rev. B
Self Cite
6
0
4
0
View full text Add to dashboard Cite

Anisotropy of quantum interference in disorderedGaAs/Alx
Pusep
¹
,
Ribeiro
²
,
Arakaki
³

et al. 2003
Phys. Rev. B
Self Cite
6
0
4
0
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Coherence of Elementary Excitations in a Disordered Electron System

Interface roughness in short-period InGaAs∕InP superlattices

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Quantum interference in the presence of a metal-to-insulator transition

Cited by 20 publications

References 23 publications

Anisotropy of quantum interference in disorderedGaAs/AlxPusep1, Ribeiro2, Arakaki3 et al. 2003Phys. Rev. BSelf Cite6040View full textAdd to dashboardCite

Anisotropy of quantum interference in disorderedGaAs/AlxPusep1, Ribeiro2, Arakaki3 et al. 2003Phys. Rev. BSelf Cite6040View full textAdd to dashboardCite

Coherence of Elementary Excitations in a Disordered Electron System

Interface roughness in short-period InGaAs∕InP superlattices

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About

Anisotropy of quantum interference in disorderedGaAs/Alx
Pusep
¹
,
Ribeiro
²
,
Arakaki
³

et al. 2003
Phys. Rev. B
Self Cite
6
0
4
0
View full text Add to dashboard Cite

Anisotropy of quantum interference in disorderedGaAs/Alx
Pusep
¹
,
Ribeiro
²
,
Arakaki
³

et al. 2003
Phys. Rev. B
Self Cite
6
0
4
0
View full text Add to dashboard Cite