Quantum magnetotransport at a type II broken-gap single heterointerface

Mid-infrared lasing from self-consistent quantum wells at a type II single broken-gap heterointerface

“…1a). In that structure electron Hall mobility as high as H = 65 000 cm 2 =V s was recorded, and quantum Hall plateaus were observed in high magnetic ÿelds (B ¡ 16 T) at 1.4 -4:2 K [8]. The electron quantum well contained two subbands (E 1 and E 2 ) with the 2D-concentrations n 1 = 7:82 × 10 11 cm −2 and n 2 = 2:77 × 10 11 cm −2 and with e ective masses of m 1 =0:046m 0 and m 2 = 0:032m 0 , respectively.…”

Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields

“…Thus, the spatially separated 2D-electrons and holes are localized in self-consistent quasi-triangular quantum wells formed by the band bending at the interface owing to the common position of the surface Fermi level which is pinned inside of the InAs conduction band [10]. 2 D-semimetal channel with high electron mobility (4-5 Â 10 4 cm 2 V À1 s À1 ) was observed at the InAs side of the heteroboundary [11].…”

Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface

“…10,11 In this paper, we report the study of EL properties of p-Ga 0.84 In 0.16 As 0.22 Sb 0.78 / p-InAs heterostructures containing quaternary solid solutions unintentionally doped and slightly doped with Sn ͑p Ͻ 5 ϫ 10 16 cm −3 ͒. In these structures, quantum transport properties of two-dimensional ͑2D͒ electron gas in the semimetal channel as a major contributor to Hall conductivity were investigated and reported elsewhere.…”