Quantum Size Effects in Transport Properties of Bi2Te3 Topological Insulator Thin Films

Рогачева, Е. И.; Budnik, A. V.; Nashchekina, O. N.; Meriuts, A. V.; Dresselhaus, M. S.

doi:10.1007/s11664-017-5561-2

Cited by 8 publications

(3 citation statements)

References 48 publications

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“…Specifically, with Bi 2 Te 3 thin film fabricated on glass substrates using thermal evaporation, the oscillation of the Seebeck coefficient depends on thickness below 100 nm. It becomes stable similar to bulk material value above 100 nm [10][11][12]. This result is also reproduced on BiSe thin films fabricated using thermal evaporation on a glass substrate [13].…”

Section: Introductionsupporting

confidence: 75%

“…All these studies share a common feature: each sample is made one by one, followed by sophisticated measurements [1,7,[10][11][12][13][14][15][16][17]. The properties of each sample depend on many fabrication details, such as the substrate temperature, its surface cleanliness, the stoichiometry of each component, vacuum chamber pressure, or cross-contaminations.…”

Section: Introductionmentioning

confidence: 99%

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An in-situ thermoelectric measurement apparatus inside a thermal-evaporator

Nguyen

Bui-Thanh

Pham

et al. 2023

Meas. Sci. Technol.

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At the ultra-thin limit below 20 nm, a film's electrical conductivity, thermal conductivity, or thermoelectricity depends heavily on its thickness. In most studies, each sample is fabricated one at a time, potentially leading to considerable uncertainty in later characterizations. We design and build an in-situ apparatus to measure thermoelectricity during their deposition inside a thermal evaporator. A temperature difference of up to 2 K is generated by a current passing through an on-chip resistor patterned using photolithography. The Seebeck voltage is measured on a Hall bar structure of a film deposited through a shadow mask. The measurement system is calibrated carefully before loading into the thermal evaporator. This in-situ thermoelectricity measurement system has been thoroughly tested on various materials, including Bi, Te, and Bi2Te3, at high temperatures up to 500 K.

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Section: Introductionsupporting

confidence: 75%

Section: Introductionmentioning

confidence: 99%

An in-situ thermoelectric measurement apparatus inside a thermal-evaporator

Nguyen

Bui-Thanh

Pham

et al. 2023

Meas. Sci. Technol.

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“…For example, Mingo et al [55] showed an increase in PF of TE nanowires of various materials (InP, GaAs, InAs and InSb) as the wire thickness became smaller. By far the thinnest Bi2Te3 thin-film study, around 18 nm with S ≈ 100 µV/K, was reported by Rogacheva et al [56] using thermal evaporation onto a hot substrate as the deposition method. Such a relationship opens up the exciting possibility of improved TE properties for very thin films, which would also have the manufacturing advantage of high deposition throughputs, to keep down the manufacturing cost.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric behaviour of Bi-Te films on polymer substrates DC-sputtered at room-temperature in moving web deposition

Tao

Wan

Deru

et al. 2020

Surface and Coatings Technology

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High-throughput roll-to-roll processing could be used to scale up the manufacture of flexible thermoelectric generators. Very thin thermoelectric layers can be manufactured at high throughput speed and low cost and, most importantly, are predicted to possess better thermoelectric properties than thicker layers. Here we present a study on a series of bismuth telluride films of different thickness (few nm to 370 nm), deposited on polymer substrates at room temperature using DC magnetron sputtering. Unlike previous studies of deposition of bismuth telluride films onto heated substrates, an island-growth mode, indicated by AFM, was observed for Bi-Te films grown at room temperature. A period of growth in which the layer only partially coats the substrate, with only imperfect connections between islands, was observed. In this partially coated region, the coating exhibited an extremely high Seebeck coefficient. An energy barrier mechanism, similar to the interface effect in nanomaterials, is proposed to explain this phenomenon, along with a possible quantum confinement effect. We found that a thinner Bi-Te film could generate a greater power factor because of a quasidecoupling of Seebeck coefficient and electrical resistivity. In addition, ensuring that the

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