Quantum transport in graphene Hall bars: Effects of vacancy disorder

Petrović, Marko D.; Peeters, F. M.

doi:10.1103/physrevb.94.235413

Cited by 16 publications

(13 citation statements)

References 26 publications

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“…The fabrication of GNC on HMDS allows for a better definition of the edges while overcoming some of the limitations that occur in processing encapsulated graphene. Also, we cannot rule out a higher concentration of vacancies in the GNCs fabricated on heterostructures of graphene and hBN due to the transfer technique reported in Ref. .…”

Section: Electron Transport Resultsmentioning

confidence: 92%

Quantized Electron Transport Through Graphene Nanoconstrictions

Clericò

Delgado-Notario

Saiz-Bretín

et al. 2018

Physica Status Solidi (a)

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Here, the quantization of Dirac fermions in lithographically defined graphene nanoconstrictions is studied. Quantized conductance is observed in single nanoconstrictions fabricated on top of a thin hexamethyldisilazane layer over a Si/SiO2 wafer. This nanofabrication method allows to obtain well defined edges in the nanoconstrictions, thus reducing the effects of edge roughness on the conductance. The occurrence of ballistic transport is proved and several size quantization plateaus are identified in the conductance at low temperature. Experimental data and numerical simulations show good agreement, demonstrating that the smoothening of the plateaus is not related to edge roughness but to quantum interference effects.

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Section: Electron Transport Resultsmentioning

confidence: 92%

Quantized Electron Transport Through Graphene Nanoconstrictions

Clericò

Delgado-Notario

Saiz-Bretín

et al. 2018

Physica Status Solidi (a)

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“…It has been found that divacancies can affect the mechanical [12,13,14,15], electrical [16,17,18], magnetic [19,20] and chemical [21,22] properties of graphene. Some of these effects can provide some useful performance qualities.…”

Section: Introductionmentioning

confidence: 99%

Effects of Divacancy and Extended Line Defects on the Thermal Transport Properties of Graphene Nanoribbons

Luo

2019

Nanomaterials

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The effects of divacancy, including isolated defects and extended line defects (ELD), on the thermal transport properties of graphene nanoribbons (GNRs) are investigated using the Nonequilibrium Green’s function method. Different divacancy defects can effectively tune the thermal transport of GNRs and the thermal conductance is significantly reduced. The phonon scattering of a single divacancy is mostly at high frequencies while the phonon scattering at low frequencies is also strong for randomly distributed multiple divacancies. The collective effect of impurity scattering and boundary scattering is discussed, which makes the defect scattering vary with the boundary condition. The effect on thermal transport properties of a divacancy is also shown to be closely related to the cross section of the defect, the internal structure and the bonding strength inside the defect. Both low frequency and high frequency phonons are scattered by 48, d5d7 and t5t7 ELD. However, the 585 ELD has almost no influence on phonon scattering at low frequency region, resulting in the thermal conductance of GNRs with 585 ELD being 50% higher than that of randomly distributed 585 defects. All these results are valuable for the design and manufacture of graphene nanodevices.

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“…Magnetic field in the quantum model is implemented through Peierls phase, as explained in Ref. 22, and the resistances are obtained by applying the Landauer-Büttiker formalism for a four-terminal 23 and multi-terminal 24 device.…”

Section: Focusing System and Sgm Potentialmentioning

confidence: 99%

Scanning gate microscopy of magnetic focusing in graphene devices: quantum versus classical simulation

Petrović¹,

Milovanović²,

Peeters³

2017

Nanotechnology

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We compare classical versus quantum electron transport in recently investigated magnetic focusing devices [S. Bhandari et al., Nano Lett. 16, 1690] exposed to the perturbing potential of a scanning gate microscope (SGM). Using the Landauer-Büttiker formalism for a multi-terminal device, we calculate resistance maps that are obtained as the SGM tip is scanned over the sample. There are three unique regimes in which the scanning tip can operate (focusing, repelling, and mixed regime) which are investigated. Tip interacts mostly with electrons with cyclotron trajectories passing directly underneath it, leaving a trail of modified current density behind it. Other (indirect) trajectories become relevant when the tip is placed near the edges of the sample, and current is scattered between the tip and the edge. We also discuss possible explanations for spatial asymmetry of experimentally measured resistance maps, and connect it with specific configurations of the measuring probes.

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Quantum transport in graphene Hall bars: Effects of vacancy disorder

Cited by 16 publications

References 26 publications

Quantized Electron Transport Through Graphene Nanoconstrictions

Quantized Electron Transport Through Graphene Nanoconstrictions

Effects of Divacancy and Extended Line Defects on the Thermal Transport Properties of Graphene Nanoribbons

Scanning gate microscopy of magnetic focusing in graphene devices: quantum versus classical simulation

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