Quasiballistic electron emission from porous silicon diodes

Koshida, Nobuyoshi; Sheng, Xiaobo; Komoda, Tsugikazu

doi:10.1016/s0169-4332(99)00004-5

Cited by 120 publications

(100 citation statements)

References 8 publications

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“…Therefore, the conclusions in this paper would also be applicable to the systems mentioned in the Introduction. 2,4,6,7 In addition, the similar reduction of the ADP scattering potential might emerge in other structures, such as the SiQW embedded in SiO 2 and a silicon slab sandwiched by SiO 2 . As electrons travel only within Si region in these cases, the reduction of the ADP scattering potential might lead to significant mobility enhancement.…”

Section: Discussionmentioning

confidence: 69%

“…A series of reports suggests that electron energy loss may be strongly suppressed in nanocrystalline silicon ͑nc-Si͒ dot arrays embedded in a silicon oxide network. [1][2][3][4][5] Also reported is coherent coupling of electronic quantum states in nc-Si dots interacting through thin silicon suboxide grain boundaries, which may be associated with quasimolecular states. 6 Another report proposes a nano electromechanical memory device using nc-Si dots embedded in a self-supporting SiO 2 beam.…”

Section: Introductionmentioning

confidence: 99%

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Reduction of acoustic-phonon deformation potential in one-dimensional array of Si quantum dot interconnected with tunnel oxides

Uno

Mori

Nakazato

et al. 2005

Journal of Applied Physics

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The scattering potential for the acoustic deformation potential scattering in a one-dimensional silicon quantum dot array interconnected by thin oxide layers is theoretically investigated. One-dimensional phonon normal modes are numerically obtained using the linear atomic chain model. The strain caused by an acoustic-phonon vibration is absorbed by the oxide layers, resulting in the reduction of the strain in the Si dots. This effect eventually leads to ϳ40% reduction of the scattering potential all over the structure. The amount of the reduction does not depend on the phonon energy, but rather on the ratio of the Si dot size to the oxide thickness.

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Section: Discussionmentioning

confidence: 69%

Section: Introductionmentioning

confidence: 99%

Reduction of acoustic-phonon deformation potential in one-dimensional array of Si quantum dot interconnected with tunnel oxides

Uno

Mori

Nakazato

et al. 2005

Journal of Applied Physics

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“…A positive bias applied to the Au electrode ejects electrons from the emitting surface into the vacuum. The emission energy distribution measured from the vacuum level exhibits a peak, which shifts toward higher energy with increasing positive bias [2], [3] as illustrated in Fig. 1(b).…”

mentioning

confidence: 93%

“…However, there are certain aspects that had yet to be satisfactorily examined, including the dependence of the emission energy and its distribution on the voltage applied to the PS diodes. Furthermore, previously suggested models [2], [4] have not been satisfactorily assessed yet.…”

mentioning

confidence: 99%

New insights in high-energy electron emission and underlying transport physics of nanocrystalline si

Uno

Nakazato

Yamaguchi

et al. 2003

IEEE Trans. Nanotechnology

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Abstract-This paper presents quantitative analysis of electron emission from nanocrystalline Si dots, and discusses its mechanism based on the calculations of electronic and phononic states. Analysis of emission energy distribution measured from the vacuum level shows that the energy at the peak of the distribution increases linearly with increasing voltage applied across the nanocrystalline Si system. The slope of the linear law is unity, regardless of process conditions. Increasing voltage significantly changes the shape of the distribution at the energies smaller than the peak, while it has minimal impact at the energies larger than the peak. Both the conventional field emission model and the metal-oxide-semiconductor model fail to explain those behaviors. Calculations of electronic and phononic states in a chain of the nanocrystalline Si dots indicate a possibility of strong suppression of electron energy relaxation, which may be a possible mechanism of the high-energy electron emission phenomena.

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“…Arrays of field emitters made of ntype porous silicon show an enhanced electron emission [2]. PS diodes can operate as surface-emitting cold cathodes [3]. On the other hand, plasma generation inside the pores [4], turns PS into a base material for flat-panel field emission [5] and plasma displays.…”

Section: Introductionmentioning

confidence: 99%

Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon

Ruano¹,

Ferron²,

Koropecki³

2009

TOSURSJ

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Abstract:We report measurements of secondary electron emission (SEE) induced by electron and ion bombardment on porous silicon (PS). We found that electron induced emission is strongly reduced by ion bombardment, and that this reduction is reversible. The reduction effect is large even for ion fluxes much lower compared to that of the electron beam. We attribute this effect to changes in the charge distribution of the surface dipole originated in the difference between ion and electron charge deposition depths. The nanostructure of PS plays an important role in this effect as well as in the reversibility of the process. We think that this effect could be useful in the dynamic centering and monitoring of ion and electron beams in electron spectroscopy.The discovery of the efficient luminescence of porous silicon (PS) by Canham [1] was the starting point for a wide interest and extensive studies devoted to this material. The tailoring of PS in the range of microns to nanometers confers a peculiar behavior to this material, where quantum effects play an important role. Arrays of field emitters made of ntype porous silicon show an enhanced electron emission [2]. PS diodes can operate as surface-emitting cold cathodes [3]. On the other hand, plasma generation inside the pores [4], turns PS into a base material for flat-panel field emission [5] and plasma displays. Although there are several studies about the physics of SEE dielectric films, size effects on the electronic properties of nanoporous silicon (NPSi) may introduce new and exciting peculiarities. The study of secondary electron emission (SEE) under ion bombardment is then of interest, from both basic physics and technological points of view.The penetration depth (range) of electrons in NPSi is large than in bulk crystalline Si due to the high porosity of this material. On the other hand, since the range of ions is comparable to the characteristic dimensions of the NPSi, i.e. quite smaller than electron ranges, the density that the ions see is essentially the same as that of the bulk materials. The reason is that within these structures the atoms remain in their original crystalline sites. Thus, the natural differences among electron and ion ranges, for similar kinetic energies, are increased due to the porous nature of NPSi. These differences promote the enhancement of the dipole moment generated by electron beam induced SEE near the surface [6] when the ion beam impinges on the surface. On the other hand, in the presence of potential neutralization mechanisms, like Auger effect [7], positive charge is also released at the very surface. This dipole moment reaches a stationary value as a result of the balance between near surface electron *Address correspondence to this author at the INTEC, CONICET -UNL Güemes 3450 -3000 Santa Fe, Argentina; Tel: +54 342 4559174; Fax: +54 342 4550944; E-mail: rkoro@intec.ceride.gov.ar depletion due to SEE, charge coming from the electron and ion beams, and relaxation by recombination through charge transport along the tortuou...

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Quasiballistic electron emission from porous silicon diodes

Cited by 120 publications

References 8 publications

Reduction of acoustic-phonon deformation potential in one-dimensional array of Si quantum dot interconnected with tunnel oxides

Reduction of acoustic-phonon deformation potential in one-dimensional array of Si quantum dot interconnected with tunnel oxides

New insights in high-energy electron emission and underlying transport physics of nanocrystalline si

Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon

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