Quaternary Alloy Films for Thin Film Resistors

Lee, Boong-Joo; Lee, Bok-Hee; Lee, Duck-Chool

doi:10.1143/jjap.42.1405

Cited by 8 publications

(8 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thin film resistors are generally used for electronic circuits because of their high stability, narrow tolerance and low TCR; therefore, various researches and developments have been reported which focus on the resistor material compositions such as NiCr, SiCr and TaN; the fabrication process includes various sputtering conditions and annealing temperatures [2][3][4][5][6][7][8][9][10][11][12]. Among these materials, Ni-Cr alloy has been especially developed as a thin film resistor, since it possesses high electrical resistivity and low TCR performance [13].…”

Section: A N U S C R I P Tmentioning

confidence: 99%

TCR control of Ni–Cr resistive film deposited by DC magnetron sputtering

Chuang

Lin

Chen³

2015

Vacuum

View full text Add to dashboard Cite

Section: A N U S C R I P Tmentioning

confidence: 99%

TCR control of Ni–Cr resistive film deposited by DC magnetron sputtering

Chuang

Lin

Chen³

2015

Vacuum

View full text Add to dashboard Cite

“…Figure 7 shows the effect of Cr content on TCR of the thin films: the TCR decreases abruptly with increase of Cr content, 14,17) where it starts with positive value at the Cr content of 30 wt % and changes from positive to negative at the Cr content of 20 wt %. The decrease of TCR of the Ni-Cr-Al-Mn-Si alloy thin films would be closely related to Cr content.…”

Section: Effect Of Target Compositionmentioning

confidence: 99%

“…In this study, Ni-Cr-Al-Mn-Si quinternary thin films with four different compositions were prepared for thin film precision resistor devices and effect of the composition, sputtering condition and post deposition annealing parameter on the physical and electrical properties of the resulting thin films were investigated concerning the results of the previous report. 14) Optimal composition and preparation process condition for sputtering technique to achieve very low TCR properties for precision thin film resistor development were proposed.…”

Section: Introductionmentioning

confidence: 99%

Precision Thin Film Resistors Based on Ni–Cr Quinternary Alloy Thin Films Prepared by Magnetron Sputtering Technique

Lee

Shin

2009

jjap

Self Cite

View full text Add to dashboard Cite

Thin film resistor devices were fabricated based on Ni-Cr quinternary alloy thin films deposited by DC magnetron sputtering technique, where four Ni-Cr alloy targets with different composition of Al, Mn, and Si were used. Ni-Cr quinternary alloy thin film properties were investigated regarding the composition of quinternary targets, thin film processing conditions and post-deposition annealing conditions. Temperature coefficient of resistance (TCR) values of the Ni-Cr quinternary alloy thin films were investigated in order to evaluate the performance of the thin film resistor devices. The more the Cr composition in the Ni-Cr alloy target increased, the smaller was the TCR of the resulting thin film. The lower the pressure during the thin film deposition was, the lower was the oxygen content in the resulting thin films, which resulted again in smaller TCR of the thin film. In addition, TCR of the resistor devices increased drastically for samples with thin films annealed at 300 C caused by formation of NiO layer through oxidation. A good performance of the smallest TCR values within AE10 ppm/ C was achieved for the thin film resistor device by optimized quinternary Ni-Cr alloy target composition [Ni (50 wt %)-Cr (40 wt %)-Al (3 wt %)-Mn (4 wt %)-Si (3 wt %)] combined with magnetron sputtering condition controls.

show abstract

“…A thin film resistor is an important component required for high precision and a low temperature coefficient of resistance (TCR). [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] The most common technology used to produce a thin film resistor is magnetron sputtering in which target composition and quality play important roles in dominating the performance of a thin film resistor. 16) Typically a Ni-Cr alloy is chosen as the target material of a thin film resistor due to its high reliability and long term stability.…”

Section: Introductionmentioning

confidence: 99%

Annealing effect on the electrical properties and composition of a NiCrAl thin film resistor

Chuang

Lin

Chen³

2015

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The composition of NiCrAl thin film resistors, under different annealing conditions in a N 2 atmosphere, was investigated. The Auger electron spectrum (AES) has been used in studying the composition of NiCrAl thin films. The concentration ratio of Cr to Ni decreases when the annealing temperature increases. The electrical properties of a NiCrAl thin film resistor are affected by the concentrations of Cr and Ni, which lead to a higher temperature coefficient of resistance (TCR) and a lower sheet resistivity. The TCR of a NiCrAl thin film resistor is %5 ppm/°C at a 250 °C annealing temperature.

show abstract

Quaternary Alloy Films for Thin Film Resistors

Cited by 8 publications

References 0 publications

TCR control of Ni–Cr resistive film deposited by DC magnetron sputtering

TCR control of Ni–Cr resistive film deposited by DC magnetron sputtering

Precision Thin Film Resistors Based on Ni–Cr Quinternary Alloy Thin Films Prepared by Magnetron Sputtering Technique

Annealing effect on the electrical properties and composition of a NiCrAl thin film resistor

Contact Info

Product

Resources

About