TCR control of Ni–Cr resistive film deposited by DC magnetron sputtering

Chuang, Nai-Chuan; Lin, Jyi-Tsong; Chen, Huey-Ru

doi:10.1016/j.vacuum.2015.05.026

Cited by 26 publications

(7 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Usually, the Seebeck coefficient of a thin film thermocouple is lower compared to that of a bulk thermocouple since thin films can contain more defects [10]. It is reported for sputtered Ni-Cr thin films that, for example, the electrical resistance and crystallite size change starts during annealing from 250 °C [47,48]. An increase of the thermovoltage and sensitivity is also reported for Pt-Rh/Pt thin film thermocouples when using to vacuum annealing [8].…”

Section: Resultsmentioning

confidence: 99%

Effects of AlN and BCN Thin Film Multilayer Design on the Reaction Time of Ni/Ni-20Cr Thin Film Thermocouples on Thermally Sprayed Al2O3

Tillmann

Kokalj

Stangier

et al. 2019

Sensors

View full text Add to dashboard Cite

Thin film thermocouples are widely used for local temperature determinations of surfaces. However, depending on the environment in which they are used, thin film thermocouples need to be covered by a wear or oxidation resistant top layer. With regard to the utilization in wide-slit nozzles for plastic extrusion, Ni/Ni-20Cr thin film thermocouples were manufactured using direct-current (DC) magnetron sputtering combined with Aluminiumnitride (AlN) and Boron-Carbonitride (BCN) thin films. On the one hand, the deposition parameters of the nitride layers were varied to affect the chemical composition and morphology of the AlN and BCN thin films. On the other hand, the position of the nitride layers (below the thermocouple, above the thermocouple, around the thermocouple) was changed. Both factors were investigated concerning the influence on the Seebeck coefficient and the reaction behaviour of the thermocouples. Therefore, the impact of the nitride thin films on the morphology, physical structure, crystallite size, electrical resistance and hardness of the Ni and Ni-20Cr thin films is analysed. The investigations reveal that the Seebeck coefficient is not affected by the different architectures of the thermocouples. Nevertheless, the reaction time of the thermocouples can be significantly improved by adding a thermal conductive top coat over the thin films, whereas the top coat should have a coarse structure and low nitrogen content.

show abstract

Section: Resultsmentioning

confidence: 99%

Effects of AlN and BCN Thin Film Multilayer Design on the Reaction Time of Ni/Ni-20Cr Thin Film Thermocouples on Thermally Sprayed Al2O3

Tillmann

Kokalj

Stangier

et al. 2019

Sensors

View full text Add to dashboard Cite

show abstract

“…The resistance of the specimens was measured using a digital multimeter (HP 34401A, Santa Clara, CA, USA) at different temperatures. The specimens were soaked for 6 minutes at t he set temperatures before measuring the electrical properties while the TCR values of the specimens were calculated using Equation (1) with the resistance at 25 • C and the resistance at 125 • C [1]:…”

Section: Discussionmentioning

confidence: 99%

“…One of the fundamental passive components is the thin film resistor, which is applied primarily in electronic circuits. Thin film resistors have exceptional properties, such as a low temperature coefficient of resistance, high precision, high stability and low noise, and are commonly used in precision electronic equipment [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

Lee

et al. 2019

Coatings

View full text Add to dashboard Cite

Cu–Mn–Dy resistive thin films were prepared on glass and Al2O3 substrates, which wasachieved by co-sputtering the Cu–Mn alloy and dysprosium targets. The effects of the addition ofdysprosium on the electrical properties and microstructures of annealed Cu–Mn alloy films wereinvestigated. The composition, microstructural and phase evolution of Cu–Mn–Dy films werecharacterized using field emission scanning electron microscopy, transmission electronmicroscopy and X-ray diffraction. All Cu–Mn–Dy films showed an amorphous structure when theannealing temperature was set at 300 °C. After the annealing temperature was increased to 350 °C,the MnO and Cu phases had a significant presence in the Cu–Mn films. However, no MnO phaseswere observed in Cu–Mn–Dy films at 350 °C. Even Cu–Mn–Dy films annealed at 450 °C showedno MnO phases. This is because Dy addition can suppress MnO formation. Cu–Mn alloy filmswith 40% dysprosium addition that were annealed at 300 °C exhibited a higher resistivity of ∼2100 μΩ·cm with a temperature coefficient of resistance of –85 ppm/°C.

show abstract

“…TFR demand with highprecision resistance and low temperature coefficients of resistance (TCR) have increased dramatically in recent years. 1,2) TFRs are generally made by a sputtering process, a form of vacuum deposition of the resistive film onto a ceramic substrate. The deposition process erodes material from a "target" such as TaN, which is then deposited onto a ceramic substrate, such as alumina.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and electrical property of tantalum oxynitride thin films prepared using high-power impulse reactive magnetron sputtering

Lee¹,

Lin²,

Lee³

2020

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Ta-N thin films were prepared on glass and Al 2 O 3 substrates using high-power impulse reactive magnetron sputtering. A Ta target was used and sputtered using Ar/N 2 two gasses mixture. The phase structures, microstructures and electrical properties of Ta-N thin film with different powers and annealing temperatures were investigated. The results showed that an amorphous structure existed in the as-deposited Ta-N films at 500 W, and some crystalline phases (TaN, Ta 2 N and β-Ta) were observed in as-deposited films at 1500 W and 2500 W. The crystallization phase did not change when the annealing temperature ranged from room temperature up to 500 °C. When the sputtering power increased to 2500 W, TaN, Ta 2 N and β-Ta crystalline phases coexisted in the as-deposited films. However, Ta-N films deposited at 2500 W and annealed at 500 °C in N 2 exhibited resistivity of ∼460 μΩ-cm with −93 ppm °C−1 temperature coefficient of resistance.

show abstract

TCR control of Ni–Cr resistive film deposited by DC magnetron sputtering

Cited by 26 publications

References 19 publications

Effects of AlN and BCN Thin Film Multilayer Design on the Reaction Time of Ni/Ni-20Cr Thin Film Thermocouples on Thermally Sprayed Al2O3

Effects of AlN and BCN Thin Film Multilayer Design on the Reaction Time of Ni/Ni-20Cr Thin Film Thermocouples on Thermally Sprayed Al2O3

A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

Microstructure and electrical property of tantalum oxynitride thin films prepared using high-power impulse reactive magnetron sputtering

Contact Info

Product

Resources

About