Quaternary GaInAsSb 2.0-2.5 micron back-illuminated focal plane array for blood glucose monitoring

Prineas, J. P.; Reddy, M.; Olesberg, J. T.; Cao, Chun; Veerasamy, Saravanan; Flatté, Michael E.; Koerperick, Edwin J.; Boggess, Thomas F.; Santilli, Michael R.; Olafsen, L. J.

doi:10.1117/12.590820

Cited by 3 publications

(1 citation statement)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The photodiode mesa is then formed using inductively coupled plasma reactive ion etching (ICP-RIE) using a CH 4 and H 2 gas mixture. The etch rate is ~3.6 nm/minute.…”

Section: Fabrication Techniquementioning

confidence: 99%

Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applications

Hattasan

Cerutti

Rodriguez

et al. 2011

Quantum Sensing and Nanophotonic Devices VIII

View full text Add to dashboard Cite

Mid-infrared spectroscopy has gained significant importance in recent years as a detection technique for substances that absorb in this spectral region. Traditionally, a spectroscopic system consists of bulky equipment which is difficult to handle and incurs high cost. An integrated spectroscopic system would eliminate these disadvantages. GaSb-based active opto-electronic devices allow realizing mid-infrared light sources and detectors in the 2-3μm wavelength range for such integrated systems. Silicon photonics, based on Silicon-on-Insulator (SOI) waveguide circuits, on the other hand, is a well established technology based on high refractive index contrast waveguides, enabling ultra-compact passive integrated photonic circuits. Moreover, SOI waveguide circuit processing is compatible with CMOS processes. Hence, the integration of GaSb-based active devices onto SOI passive waveguide circuits potentially allows highly compact spectroscopic systems with a large degree of freedom in passive device design to improve the system performance. This approach has a high potential for several applications, e.g. an implantable glucose level monitor and gas sensing devices.In this paper, we report our work on the integration of GaSb-based epitaxy onto SOI waveguide circuits. The heterogeneous integration is based on an epitaxial layer transfer process using the polymer divinylsiloxanebenzocyclobutene (DVS-BCB) as a bonding agent. The process is performed by transferring the epitaxial layer to an SOI waveguide circuit wafer through a die-to-wafer bonding process. With this approach, a bonding layer of 150 nm thickness is easily achievable. We also report our results on the integration of waveguide-based GaSb p-i-n photodetectors coupled to SOI waveguide circuits using evanescent coupling, which show a responsivity higher than 0.4A/W. The design of active and passive structures and the overall fabrication process will also be discussed.

show abstract

“…The photodiode mesa is then formed using inductively coupled plasma reactive ion etching (ICP-RIE) using a CH 4 and H 2 gas mixture. The etch rate is ~3.6 nm/minute.…”

Section: Fabrication Techniquementioning

confidence: 99%

Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applications

Hattasan

Cerutti

Rodriguez

et al. 2011

Quantum Sensing and Nanophotonic Devices VIII

View full text Add to dashboard Cite

show abstract

Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response

Hurtado-Castañeda

Herrera-Pérez

Arias-Cerón

et al. 2015

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

Modelowanie i optymalizacja antymonkowych laserów typu VCSEL

Piskorski¹

2015

ELECTROTECHNICAL REVIEW

View full text Add to dashboard Cite

In this work results of the threshold operation of antimonide-based vertical-cavity surface-emitting laser have been presented with the aid of the comprehensive fully self-consistent optical-electrical-thermal-recombination numerical model. Calculations have been carried out for the structure emitting at 2.6 µm. The advantages of incorporating the tunnel junction for current confinement have been shown and the influence of a layer shift caused by presence of the tunnel junction on the mode selectivity has been examined. It was shown that reducing the layer shift, with initial height equal to 55 nm, by the 35 nm leads to 7 and 25 times higher mode losses for LP 11 and LP 21 modes, respectively, and only 10% higher threshold current for the LP 01 mode. Further reduction of the layer shift leads to high increment of the threshold current value: 20% for 40 nm reduction and 50% for 45 nm one. (Modelling and optimisation of the antimonide-based VCSELs).

show abstract

Quaternary GaInAsSb 2.0-2.5 micron back-illuminated focal plane array for blood glucose monitoring

Cited by 3 publications

References 8 publications

Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applications

Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applications

Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response

Modelowanie i optymalizacja antymonkowych laserów typu VCSEL

Contact Info

Product

Resources

About