Quick and reliable technology for fabrication of stand-alone BSCCO mesas

Vopilkin, E. A.; Chiginev, A. V.; Revin, L. S.; Tropanova, A. N.; Shuleshova, I. Yu.; Охапкин, А. И.; Shovkun, A. D.; Кулаков, А. Б.; Pankratov, A. L.

doi:10.1088/0953-2048/28/4/045006

Cited by 7 publications

(7 citation statements)

References 27 publications

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“…It is important to note that, in the previous studies, [39][40][41] the wet etching of a single crystal of Bi2212 with diluted HCl was shown to transform the etched region into insulating BiOCl. When a very dilute HCl solution with pH = 1.65 was used, the transformation of Bi2212 to BiOCl was only observed on the surface of Bi2212 single crystals.…”

Section: Evaluation Of Etching Solutions For Thicker Bi2212 Samsmentioning

confidence: 97%

“…The edges of the mesa structures are covered by different materials. According to the previous studies, [39][40][41] they would be chloride materials such as BiOCl transformed during the etching.…”

Section: Evaluation Of Etching Solutions For Thicker Bi2212 Samsmentioning

confidence: 97%

“…39) When a higher concentration of HCl was used, the etched depth of 7 μm with a large undercut of the sample could be obtained. 41) Furthermore, we reported that the undercut of mesa structures can be reduced by using a mixture solution of HNO 3 and HCl. 37) A wet etching method investigated here is based on the above previous studies and is applicable to the thicker SAMs up to roughly 10 μm.…”

Section: Evaluation Of Etching Solutions For Thicker Bi2212 Samsmentioning

confidence: 99%

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Investigation of wet etching solutions and method for thicker stand alone type of mesa structures of Bi2212 single crystals

Imai

Kashiwagi

Nakagawa

et al. 2021

Jpn. J. Appl. Phys.

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In order to develop terahertz emitting devices based on high temperature superconductor Bi2212, we explored a simple and easy fabrication process of the stand alone type of mesa structures (SAMs) by using a wet etching method. We underscored a fact that a thicker mesa structure up to about 10 μm can be made by finding an appropriate etching process comparing four different solutions in the wet etching processes. In addition, we have also improved a method to produce free standing SAM chips which are not fixed on any substrates by glues. We measured the characteristics of the device fabricated using this wet etching method and observed clear emission from a chip with the dimensions of 170 × 170 × 8.3 μm3 without the local heating signature of back bending behavior in the current–voltage characteristics. This mesa chip is several times thicker than those used previously. Thus, the method shown here enables us to make many thicker SAMs at a time and would be useful to improve the emission power of superconducting terahertz emitters.

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Section: Evaluation Of Etching Solutions For Thicker Bi2212 Samsmentioning

confidence: 97%

Section: Evaluation Of Etching Solutions For Thicker Bi2212 Samsmentioning

confidence: 97%

Section: Evaluation Of Etching Solutions For Thicker Bi2212 Samsmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of wet etching solutions and method for thicker stand alone type of mesa structures of Bi2212 single crystals

Imai

Kashiwagi

Nakagawa

et al. 2021

Jpn. J. Appl. Phys.

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“…The required facilities and techniques for these and other methods are listed in Table 1. Chemical etching processes such as the hydrochloric acid modification method have the advantage of speedy fabrication of both in-line [81] and stand-alone [82] devices, although emission detection has not yet been successful. [32,33] The most sensitive emission detection method is lock-in detection with a Si bolometer cooled by liquid helium.…”

Section: Bi2212 Crystalmentioning

confidence: 99%

Terahertz-wave emission from Bi2212 intrinsic Josephson junctions: a review on recent progress

Kakeya

Wang

2016

Supercond. Sci. Technol.

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Emission of terahertz (THz) electromagnetic (EM) waves from a high critical temperature (Tc) superconductor intrinsic Josephson junction (IJJ) is a new and promising candidate for practical applications of superconducting devices. From the engineering viewpoint, the IJJ THz source is competitive against the present semiconducting THz sources such as quantum cascade lasers and resonance tunnelling diode oscillators because of its broad tunable frequency range and ease of the fabrication process for the device. The emitted EM waves are considered to be coherent because the emission is yielded by synchronisation of thousand stacked IJJs consisting of the mesa device. This synchronisation is peculiar: the resonant frequency of each IJJ is distributed because the cross section of the mesa device is trapezoidal in shape. One of the key features of the synchronisation mechanism is the temperature inhomogeneity of the emitting device. In this topical review, we describe the recent progress in studies of IJJ THz sources with particular emphasis on the relevance of the temperature inhomogeneity to the synchronisation and the emission intensity. This review is of specific interest because the IJJ THz source shows the rich variety of functions due to self-heating which has always been a detrimental feature in the present superconducting devices. Moreover, the thermal managements used for IJJ THz sources will be common with those of other semiconducting devices such as quantum cascade lasers. In addition, this review is to invite the readers into related research through the detailed descriptions of experimental procedures.

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“…Then a layer of 50 nm thick gold was deposited on BSSCO second surface by thermal deposition. After that, using the original method of fast chemical etching [7], developed in our team, the cylindrical single mesastructures were fabricated. The obtained sample was glued to the copper holder, Fig.…”

mentioning

confidence: 99%