Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon

Simoen, Eddy; Claeys, Cor; Kraitchinskii, A.; Kras'ko, M.; Neimash, V. B.; Shpinar, L.I.

doi:10.4028/www.scientific.net/ssp.82-84.425

Cited by 9 publications

(11 citation statements)

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“…This implies that below a certain concentration threshold ͑perhaps Ͻ10 18 cm Ϫ3 ͒ no or negligible beneficial hardening effect is anticipated. 39 For higher Sn concentrations the created Sn-V complexes may enhance again the carrier recombination. 19 Another factor contraindicating Sn radiation hardening is the electrical activity of the Sn-V centers.…”

Section: Discussionmentioning

confidence: 99%

Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness

Claeys

Simoen

Neimash

et al. 2001

J. Electrochem. Soc.

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This paper reviews the impact of doping silicon with substitutional tin impurities on the formation of intrinsic and extrinsic lattice defects. The two major topics covered are ͑i͒ the effect on the diffusivity and aggregation/precipitation of interstitial oxygen in Czochralski ͑CZ͒ silicon and ͑ii͒ the formation of stable radiation defects in irradiated Sn-doped material. As demonstrated, the compressive stress associated with incorporating a large Sn atom on a lattice site is the basic feature governing the interactions with point defects. Consequently, Sn acts as a selective vacancy trap, while, in contrast, not affecting interstitial reactions. This leads to a reduced formation of oxygen thermal donors in n-type Si and lowers the concentration of vacancy-oxygen and divacancy centers in irradiated material. Enhanced oxygen precipitation has been noted around 750°C in p-type CZ silicon. Furthermore, specific Sn-related radiation defects are introduced, which question the use of doping with tin as a technique for substrate hardening.

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Section: Discussionmentioning

confidence: 99%

Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness

Claeys

Simoen

Neimash

et al. 2001

J. Electrochem. Soc.

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“…However, the electrical activity of SnV pairs creates channels for recombination activity, which can be generally harmful for the operation of devices. Remarkably, DLTS and PL measurements have verified [97,173,174] that Sn doping suppresses the formation of VO and V 2 , as with PV pairs (E-centres), in n-type doped Si; these are important recombination centres. It has also been shown [97,173,174] that the recombination activity of the Sn-related radiation defects is low.…”

Section: G Trendsmentioning

confidence: 88%

Vacancy-oxygen defects in silicon: the impact of isovalent doping

Londos

Sgourou

Hall

et al. 2014

J Mater Sci: Mater Electron

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Silicon is the mainstream material for many nanoelectronic and photovoltaic applications. The understanding of oxygen related defects at a fundamental level is essential to further improve devices, as vacancy-oxygen defects can have a negative impact on the properties of silicon. In the present review we mainly focus on the influence of isovalent doping on the properties of A-centers in silicon. Wherever possible, we make comparisons with related materials such as silicon germanium alloys and germanium. Recent advanced density functional theory studies that provide further insights on the charge state of the A-centers and the impact of isovalent doping are also discussed in detail.

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“…The Sn concentrations were determined by secondary-ion mass spectroscopy during a series of previous studies. [17,19,20,26] The [O i ] and [C s ] values were determined from measurements of the intensity of the absorption bands at 1107 and 607 cm À1 with the use of the calibration coefficients of 3.14 Â 10 17 and 0.94 Â 10 17 cm À2 , respectively. The recombination carrier lifetime was derived at room temperature from the relaxation of nonequilibrium photoconductivity at low excitation (Δn/n 0 %1%, Δn is the concentration of nonequilibrium carriers).…”

Section: Methodsmentioning

confidence: 99%

“…Earlier, it was found that the irradiation‐induced lifetime degradation in Cz Si:[Sn = (2 − 4)×10 17 cm −3 ] with resistivity ≈2 Ω cm occurs faster in p‐type Si and slower n‐type Si compared with Sn‐free material. [ 24,25 ] Although in the study by Simoen et al, [ 26 ] it was observed that increasing the Sn concentration from 1.7 × 10 18 to 6.5 × 10 18 cm −3 also accelerates the carrier lifetime degradation in γ‐irradiated Cz n‐Si with resistivity ≈45 Ω cm. In our previous investigation, it was found that the radiation damage of carrier lifetime in 60 Co γ‐irradiated n‐Si:Sn is determined by the phosphorus doping level, and in some cases the low‐resistivity n‐Si:Sn can be considered as a material with enhancement radiation tolerance.…”

Section: Introductionmentioning

confidence: 99%

Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

Kras'ko

Kolosiuk

Voitovych

et al. 2021

Physica Status Solidi (a)

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Herein, the results that determine some conditions for increasing the radiation hardness of 60Co gamma or 1 MeV electron‐irradiated tin‐doped n‐type Czochralski silicon (Cz n‐Si:Sn) are presented. These conditions are determined from the analysis of the formation kinetics of dominant radiation defects (namely, VO and SnV complexes) and the recombination of charge carriers through the electronic levels of these defects in samples with different concentrations of phosphorus and tin. It is shown that low‐resistivity Cz n‐Si with P doping levels >5 × 1014 cm−3 containing in addition [Sn] ≈1017–1019 cm−3 has a radiation hardening potential. In this material, the radiation degradation of carrier lifetime is several times smaller compared with Sn‐free n‐Si, whereas the conductivity compensation is negligible for both materials. The reduction of the lifetime degradation rate is due to a reduction of VO concentration in low‐resistivity Cz n‐Si:Sn.

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Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon

Cited by 9 publications

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Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness

Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness

Vacancy-oxygen defects in silicon: the impact of isovalent doping

Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

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Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon

Cited by 9 publications

References 0 publications

Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness

Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness

Vacancy-oxygen defects in silicon: the impact of isovalent doping

Carrier Lifetime in 60Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

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Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness