Radiation degradation prediction for InGaP solar cells by using appropriate estimation method for displacement threshold energy

Okuno, Yasuki; Okuda, Shuichi; Akiyoshi, Masafumi; Oka, Takashi; harumoto, masaki; Omura, K.; Kawakita, Shirou; Imaizumi, Mitsuru; Messenger, S.; Lee, Kan‐Hua; Yamaguchi, Masafumi

doi:10.1063/1.4989891

Cited by 10 publications

(10 citation statements)

References 22 publications

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“…Several quantities in the NIEL formula and, more generally, the overall understanding of radiation damage can be strongly improved via AIMD and TDDFT+MD studies. T d , for example, is an important quantity that can significantly affect the NIEL [185,186] and its accurate estimation can be accessed by AIMD simulations [187,188]. Recent results for T d in semiconductors have shown that the electronic excitations can, in general, reduce their value [122], in line with previous experimental results [189].…”

Section: Improving the Model For Solar Cell Degradation Via A Multisc...supporting

confidence: 69%

Modeling Radiation Damage in Materials Relevant for Exploration and Settlement on the Moon

Koval¹,

Gu²,

Muñoz‐Santiburcio³

et al. 2022

Lunar Science - Habitat and Humans

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Understanding the effect of radiation on materials is fundamental for space exploration. Energetic charged particles impacting materials create electronic excitations, atomic displacements, and nuclear fragmentation. Monte Carlo particle transport simulations are the most common approach for modeling radiation damage in materials. However, radiation damage is a multiscale problem, both in time and in length, an aspect treated by the Monte Carlo simulations only to a limited extent. In this chapter, after introducing the Monte Carlo particle transport method, we present a multiscale approach to study different stages of radiation damage which allows for the synergy between the electronic and nuclear effects induced in materials. We focus on cumulative displacement effects induced by radiation below the regime of hadronic interactions. We then discuss selected studies of radiation damage in materials of importance and potential use for the exploration and settlement on the Moon, ranging from semiconductors to alloys and from polymers to the natural regolith. Additionally, we overview some of the novel materials with outstanding properties, such as low weight, increased radiation resistance, and self-healing capabilities with a potential to reduce mission costs and improve prospects for extended human exploration of extraterrestrial bodies.

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Section: Improving the Model For Solar Cell Degradation Via A Multisc...supporting

confidence: 69%

Modeling Radiation Damage in Materials Relevant for Exploration and Settlement on the Moon

Koval¹,

Gu²,

Muñoz‐Santiburcio³

et al. 2022

Lunar Science - Habitat and Humans

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“…5) However, in our previous studies, it was observed that electrons at 60 keV generate radiation-induced defects resulting from the recoil of phosphorus atoms and thus cause the degradation of InGaP solar cells. [6][7][8] This unexpected degradation is probably caused by the incorrect value of displacement threshold energy (E d ) in NIEL.…”

Section: Introductionmentioning

confidence: 99%

Degradation prediction using displacement damage dose method for AlInGaP solar cells by changing displacement threshold energy under irradiation with low-energy electrons

Okuno

Ishikawa

Akiyoshi

et al. 2020

Jpn. J. Appl. Phys.

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Performance degradation prediction for space solar cells under irradiation with low-energy electrons is greatly affected by displacement threshold energy (Ed) when a displacement damage dose (DDD) model is used. According to recent studies, the Ed of P atoms is much lower than the conventional Ed value in InP-type solar cells irradiated with low-energy electrons. This indicates that the value of Ed typically used in DDD model leads to significant error in performance degradation prediction. In this study, degradation of AlInGaP solar cells is observed after irradiation with 60–500 keV electrons. The results suggest that the Ed of P atoms in AlInGaP solar cells is much smaller than the conventionally used Ed value. By using the DDD model with the Ed value obtained in this study (Ed = 3.5 eV for P), we demonstrated that the performance degradation predicted by the DDD model agrees well with the experimental results.

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“…shown in [36] for the InGaP compound, that to get calculated Fig. 2(a) shows that at low electron energies E e (up to about 314 1 MeV) there is a significant difference between the NIEL c 315 results for different E d values.…”

Section: B Niel C For Gapmentioning

confidence: 90%

NIEL Calculations for III–V Compound Semiconductors Under Electron or Proton Irradiation

Akkerman¹,

Barak²,

Murat³

2022

IEEE Trans. Nucl. Sci.

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The nonionizing energy loss (NIEL) concept, intro-1 duced more than 40 years ago, is still used to characterize 2 the damage generated by different particles and γ -rays. Its 3 continuing relevance is due to the experimentally established 4 scaling in the creation rate of defects by radiation of different 5 types. NIEL calculations are quite simple, based on classical 6 physics. We thus name them classical NIEL, NIEL c . Their 7 calculation depends on an a priori known E d -displacement 8 threshold energy in monoatomic materials. For the compound 9 semiconductor materials studied here, GaX and InX, where X 10 are the cations N, P, As, Sb, the experimental E d values vary 11 over a wide range and only approximate values for NIEL c can 12 be calculated. Thanks to some recent studies carried out using 13 the molecular dynamic (MD) method, the NIEL values were 14 estimated using atomic scale calculations. Consequently, we can 15 now compare NIEL c with more precise data. These data also 16 include the "dynamic" behavior of the NIEL, which is related to 17 the annealing of the damage (like Frenkel pair recombination) 18 and the generation of extended crystalline defects. The NIEL 19 calculated using the MD method is referred to in the literature 20 as NIEL eff . A detailed comparison between NIEL c and NIEL eff as 21 a function of electron and proton energies is made here. It shows 22 that the difference between the two quantities is not large and 23 cannot influence the dependence of NIEL on temperature and 24 different radiation types. Both yield similar results in calculating 25 the effect of displacement damage. As an additional use of NIEL c , 26 we analyze its application to estimate the relative tolerance of 27 the different members of the GaX and InX families to radiation 28 defects as a function of particle energies. 29 Index Terms-Displacement damage, effects below damage 30 threshold, molecular dynamics (MDs), nonionizing energy loss 31 (NIEL), proton and electron interactions in III-V compound 32 semiconductors. 33 on classical physics and experimentally verified characteris-38 tics of radiation interaction with matter. We thus name it 39 classical NIEL (NIEL c ). Unfortunately, NIEL by itself does 40 not characterize the radiation-induced defects and their spatial 41 structure, which affect the electrical and optical properties of 42 the damaged materials. But, as shown in [1], it is a good 43

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Radiation degradation prediction for InGaP solar cells by using appropriate estimation method for displacement threshold energy

Cited by 10 publications

References 22 publications

Modeling Radiation Damage in Materials Relevant for Exploration and Settlement on the Moon

Modeling Radiation Damage in Materials Relevant for Exploration and Settlement on the Moon

Degradation prediction using displacement damage dose method for AlInGaP solar cells by changing displacement threshold energy under irradiation with low-energy electrons

NIEL Calculations for III–V Compound Semiconductors Under Electron or Proton Irradiation

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