Radiation Effects in InP JFETs

Abstract

Transient and total dose radiation effects were studied in InP JFETs under bias conditions. The transient responses in drain current, ID, and output power,

Historical perspective on radiation effects in III-V devices

“…Improved radiation hardness was achieved by elimination of the gate insulator using a JFET design. It was reported [68] that these InP JFETs exhibited only small transients when irradiated by pulsed electrons and had total-dose hardness levels of greater than 8 10 rads.…”