Small-signal characteristics of InP Junction FET's

Kruppa, W.; Boos, J.B.

doi:10.1109/edl.1987.26610

Cited by 9 publications

(3 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Normally, Si implantation is used to produce n-type regions, and Be implantation, for p-type regions. Proton implantation has been effective in the electrical isolation of devices in both GaAs Consequently, reproducible, high-quality p-n junctions have been difficult to fabricate, especially in InP crystals [2]. Co-implantation techniques have reduced the redistribution of implanted Be [3] but difficulties with residual crystal damage remain.…”

Section: Introductionmentioning

confidence: 99%

As-Implanted and Annealing Behavior of Hand Be Implants in InP and Comparison with GaAs

Zavada

Wilson

Novak³

1991

MRS Proc.

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

As-Implanted and Annealing Behavior of Hand Be Implants in InP and Comparison with GaAs

Zavada

Wilson

Novak³

1991

MRS Proc.

View full text Add to dashboard Cite

show abstract

“…For a JFET, together with the requirement of high-quality n-type layers, the most challenging step in its fabrication is the gate formation, for which the p + layer must be shallow and have a profile as steep as possible in order to obtain the highest transconductance [4]. Therefore, the manufacture of these layers is of great interest from a technological point of view.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted n InP junctions

Quintanilla¹,

Dueñas²,

Castán³

et al. 1998

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The deep levels existing in fully ion implanted and rapidly thermally annealed p + n InP junctions were investigated in this work. The samples were co-implanted with magnesium and silicon. An additional phosphorus implantation was carried out in some samples to study its effect. In order to characterize the traps, deep level transient spectroscopy (DLTS) and the capacitance-voltage transient technique (CVTT) were used. For a (control) sample implanted with Mg only, four deep electron levels located at the upper half of the band gap (at 0.45, 0.2 eV 0.25 and 0.27 eV below the conduction band) were detected by DLTS. On the contrary, for the Mg-Si-and Mg-P-Si-implanted samples only two of them (at 0.25 and 0.27 eV below the conduction band) were observed. Several characteristics of each trap were derived by CVTT measurements. Tentative assignments have been proposed for the physical nature of these deep levels.

show abstract

“…In particular, p-type implants are required in device applications to obtain low specific contact resistance or sharp p ϩ -shallow gates in junction field effect transistors. 1,2 For this kind of implant, electrical activation is usually less than 50%, and the maximum achievable hole concentration is about 5ϫ10 18 cm…”

Section: Introductionmentioning

confidence: 99%

Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

Quintanilla

Dueñas

Castán

et al. 1997

Journal of Applied Physics

View full text Add to dashboard Cite

In this work, we investigate the deep levels present in ion implanted and rapid thermal annealed ͑RTA͒ InP p ϩ -n junctions. The samples were implanted with magnesium or coimplanted with magnesium and phosphorus. These levels were characterized using deep level transient spectroscopy ͑DLTS͒ and capacitance-voltage transient technique ͑CVTT͒. Seven majority deep levels located in the upper half of the band gap were detected in the junctions by using DLTS measurements, four of which ͑at 0.6, 0.45, 0.425, and 0.2 eV below the conduction band͒ result from RTA, while the origin of the other three levels ͑at 0.46, 0.25, and 0.27 eV below the conduction band͒ can be ascribed to implantation damage. An RTA-induced origin was assigned to a minority deep level at 1.33 eV above the valence band. From CVTT measurements, several characteristics of each trap were derived. Tentative assignments have been proposed for the physical nature of all deep levels.

show abstract

Small-signal characteristics of InP Junction FET's

Cited by 9 publications

References 7 publications

As-Implanted and Annealing Behavior of Hand Be Implants in InP and Comparison with GaAs

As-Implanted and Annealing Behavior of Hand Be Implants in InP and Comparison with GaAs

Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted n InP junctions

Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

Contact Info

Product

Resources

About