Radiation Effects in Thin Films

Investigation of irradiated monolithic transistors for space applications

“…generating vacancy-interstitial pair, the so-called Frenkel pairs. Displacements produced in silicon during neutron irradiation have been widely studied [21]- [24]. Neutrons with sufficient large energies (i.e.…”

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability

“…The radiation effects on the insulating layer and the conductive parts of the device can be very different depending on the insulator quality.According to Ref. [1] the most degraded Si-MOSFET electrical parameters after radiation exposure are: the effective channel mobility (µ EFF )that significantly lowers; the drain leakage current in off-state (I d_leak ) -considerable increases; and the oxide breakdown voltage (V oxide_br ) -also decreases with respect to the non-irradiated (NI) devices. Although previous studies have shown that SiC is a material more robust to radiation exposure than Si [2], there are very few references on the radiation impact on 4H-SiC-MOSFET electrical parameters.…”

Calculations of Absorbed Dose in Heavy-Ion Irradiated Phase-Change Memory Cells

“…Ionization energy loss refers to a process in which incoming particle interacts with electrons of the target atom resulting in electronic excitation or ionization of the atom. Due to the fact that the overall scattering of the particle from an electron is dominated by the mass and the charge of the particle, heavy ion (massive particle) tend to scatter the small mass electrons without losing much energy, and they transfer only a small fraction of their energy in a single electronic collision [13,14].…”

“…Ions and their energies were chosen to represent well known radiation fields, i.e. those encountered in space or nuclear facility envirnoment [13]. For every ion energy, the thicknesses of phase change layer was set to: 25, 50, 75, 100 or 125 nm.…”