Ion implantation and proton−enhanced diffusion in semiconductorsThe formation of a phosphorus or boron impurity peak in silicon has been observed following irradiation with monoenergetic protons. In this study we used a sample temperature of 700'C, proton-beam energies of 50-140 keY, proton-beam current densities of -I pA/cm 2 , and proton-bombardment times of 3 min to 3 h. The resultant impurity profiles were obtained using Schottky-barrier differential C -V techniques.