Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate Oxidation

Naruke, K.; Yoshida, Masahiro; Maeguchi, K.; Tango, H.

doi:10.1109/tns.1983.4333080

Cited by 81 publications

(27 citation statements)

References 15 publications

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“…Previous measurements of the radiation-induced increase in Dit have reported a sublinear dose2/3 dependence [4,14]. Here, we find Dit to increase linearly with dose initially, followed by sublinear dependence at higher doses, implying that the dose2/3 dependence is a high dose effect as suggested by McLean [14].…”

Section: Introductionsupporting

confidence: 83%

“…The generation of fast interface states Dit at the Si-SiO2 interface by ionizing radiation [1][2][3][4][5][6] and by other processes [7][8][9] has been investigated extensively because of its importance in the degradation of MOS devices.…”

Section: Introductionmentioning

confidence: 99%

“…Previous studies have shown that the increase in Dit in irradiated MOS samples is larger for thicker oxides [3][4][5], with reported dependencies varying from tox2/ [3] to tox2 [4]. To aid in understanding and resolving these variations, we have taken several steps to isolate the oxide thickness contribution.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides

Saks¹,

Ancona²,

Modolo

1986

IEEE Trans. Nucl. Sci.

144

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The creation of interface states Dit by ionizing radiation is investigated in MOS capacitors as a function of oxide thickness in the range 6-50 nm.A comparison of the thickness dependence in etchback and asgrown oxides supports the idea that the number of defects at the Si-SiO2 interface increases with oxidation time. For relatively thin oxides (tox<12 nm), the rate of increase in Dit is significantly smaller than would be extrapolated from the behavior of thicker oxides for both oxide types.This effect is probably caused by tunneling of trapped holes near the oxide interfaces.

show abstract

Section: Introductionsupporting

confidence: 83%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides

Saks¹,

Ancona²,

Modolo

1986

IEEE Trans. Nucl. Sci.

144

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show abstract

“…The BOX capacitors were fabricated using commercial smart-cut Ò wafers, which had the top silicon layer over etched by 5% using Reactive Ion Etching (RIE) to reveal the 400 nm BOX. The thermal oxide capacitors were fabricated using a wet thermal oxide grown at a temperature of 850°C [12,13] for 9.5 h to achieve a target oxide thickness of 400 nm. From ellipsometer measurements, the wafer oxide thicknesses were 423 ± 10 nm and 390 ± 10 nm for the thermal oxide and BOX capacitors, respectively.…”

Section: Methodsmentioning

confidence: 99%

Total ionizing dose response of fluorine implanted Silicon-On-Insulator buried oxide

Potter

Morgan

Shaw

et al. 2014

Microelectronics Reliability

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“…The effect of process and device parameters on the device performance has been the subject of many investigations [11][12][13]. The suitability and usability of MOS devices as a radiation sensor depends on the device sensitivity which is directly related to the gate insulator and its interface with the underlying semiconductor.…”

Section: Introductionmentioning

confidence: 99%

Ge nanocrystals embedded in SiO2 in MOS based radiation sensors

Aktağ

Yılmaz

Mogaddam

et al. 2010

Nuclear Instruments and Methods in Physics Research Section B:

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a b s t r a c tIn this work, the effects of gamma radiation on the Raman spectra of Ge nanocrystals embedded in SiO 2 have been investigated. SiO 2 films containing nanoparticles of Ge were grown using the r.f.-magnetron sputtering technique. Formation of Ge nanocrystals was observed after high temperature annealing in an inert atmosphere and confirmed by Raman measurements. The intensity of the Raman signal originating from Ge nanocrystals was found to decrease with increasing gamma radiation. The study also includes the gamma radiation effects on MOS structure with Ge nanocrystals embedded in SiO 2 . The gamma radiation effects from 500 up to 4000 Gray were investigated. Capacitance-voltage measurements were performed and analyzed. Oxide traps and interface trap charges were calculated. Results show that MOS structure with Ge nanocrystals embedded in SiO 2 is a good candidate to be used in radiation sensors, especially at high radiation doses.

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Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate Oxidation

Cited by 81 publications

References 15 publications

Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides

Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides

Total ionizing dose response of fluorine implanted Silicon-On-Insulator buried oxide

Ge nanocrystals embedded in SiO2 in MOS based radiation sensors

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