Total ionizing dose response of fluorine implanted Silicon-On-Insulator buried oxide

Potter, Kenneth; Morgan, Katrina; Shaw, Chris; Ashburn, P.; Redman-White, W.; Groot, C. H. de

doi:10.1016/j.microrel.2014.07.018

Cited by 8 publications

(4 citation statements)

References 21 publications

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“…In this case, however, the AC signal is adequately high to prevent inversion charges to gather at the Si/SiO 2 interface. This rare occasion of inversion characteristics is due to a lateral AC current that extends beyond the metallic plate of the gate and increases the measured capacitance [35,36]. This effect has not been examined further in this work as it is not affected by irradiation.…”

Section: Pre-irradiation Calibrationmentioning

confidence: 98%

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A systematic method for simulating total ionizing dose effects using the finite elements method

2017

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Simulation of total ionizing dose effects in field isolation of FET technologies requires transport mechanisms in the oxide to be considered. In this work, carrier transport and trapping in thick oxides using the finite elements method in the Synopsys Sentaurus platform are systematically simulated. Carriers are generated in the oxide and are transported out through a direct contact with the gate and thermionic emission to the silicon. The method is applied to calibrate experimental results of 400 nm SiO 2 capacitors irradiated at total doses of 11.6 kRad (SiO 2 ) and 58 kRad (SiO 2 ). Driftdiffusion-enabled trapping as well as other issues that arise from the involved physics are discussed. Effective bulk trap densities and activation energies of the traps are extracted.

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Section: Pre-irradiation Calibrationmentioning

confidence: 98%

“…Two total doses were used: Sample A with 11.6 kRad (SiO 2 ) and Sample B with 58 kRad(SiO 2 ). The fabrication and characterization process is explained in detail in [35].…”

Section: Pre-irradiation Calibrationmentioning

confidence: 99%

A systematic method for simulating total ionizing dose effects using the finite elements method

2017

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“…[124][125][126][127][128][129][130][131]. The interfacial defect densities modified by ion implantation have been studied combining IPE and ac conductance spectroscopy methods on nitrogen implanted SiC/SiO 2 interfaces [132].…”

Section: Photoinjectionmentioning

confidence: 99%

“…The experimental studies of the trapped charge in ion-implanted insulators are numerous with several examples represented in Refs. [124][125][126][127][128][129][130][131]. The interfacial defect densities modified by ion implantation have been studied combining IPE and ac conductance spectroscopy methods on nitrogen implanted SiC/SiO 2 interfaces [132].…”

Section: Photoinjectionmentioning

confidence: 99%

Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

Fedorenko¹

2017

Ion Implantation - Research and Application

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Ion implantation is a nonequilibrium doping technique, which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral diffusion processes in device fabrication, and possibility to reach high concentrations of doping impurities can be considered as distinct advantages of ion implantation. Due to excellent controllability, uniformity, and the dose insensitive relative accuracy ion implantation has grown to be the principal doping technology used in the manufacturing of integrated circuits. Originally developed from particle accelerator technology, ion implanters operate in the energy range from tens eV to several MeV (corresponding to a few nms to several microns in depth range). Ion implantation introduces point defects in solids. Very minute concentrations of defects and impurities in semiconductors drastically alter their electrical and optical properties. This chapter presents methods of defect spectroscopy to study the defect origin and characterize the defect density of states in thin film and semiconductor interfaces. The methods considered are positron annihilation spectroscopy, electron spin resonance, and approaches for electrical characterization of semiconductor devices.

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Effects of total dose irradiation on the threshold voltage of H-gate SOI NMOS devices

et al. 2016

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Total ionizing dose response of fluorine implanted Silicon-On-Insulator buried oxide

Cited by 8 publications

References 21 publications

A systematic method for simulating total ionizing dose effects using the finite elements method

A systematic method for simulating total ionizing dose effects using the finite elements method

Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

Effects of total dose irradiation on the threshold voltage of H-gate SOI NMOS devices

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