Radiation response of fully-depleted MOS transistors fabricated in SIMOX

Abstract

The total dose radiation response of radiation-resistant fullydepleted submicron n-MOS and PMOS transistors fabricated in SIMOX is presented. The total ionizing dose radiation induced threshold voltage shifts under three different irradiation bias conditions, including the worst case (pass-gate) bias for n-MOS transistors are discussed. Total dose hard fullydepleted p-MOS transistors are experimentally demonstrated. The larger threshold voltage shifts of fullydepleted n-MOS transistors as compared to partiallydepleted n-MOS transistors in an ionizing radiation environment are explained by a model coupling the radiation induced buried oxide charge to the top transistor.

Total Ionizing Dose Radiation Effects on 14 nm FinFET and SOI UTBB Technologies

“…The effect of charge coupling from the BOX to the top gate transistor for fully-depleted technology is calculated using the following equation [5]: dielectric constant of silicon channel (ε Si ) = 11.7…”

Bias dependence of FD transistor response to total dose irradiation

“…The coupling coefficient is function of the fully depleted silicon capacitance , the buried oxide and the front oxide capacitances and the capacitance due to interface states and is given by [11] (1)…”

“…The complexities include total dose induces latch phenomena (triggered by floating body effect) [7]- [10] and coupling effect between front and back gate transistors. Different works have been published on radiation response of FD devices [11], [12] showing different and sometimes opposite worst case conditions. The purpose of this paper is to determine the worst-case bias of FD SOI NMOS transistors through experimental analysis.…”

Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs

“…For fully-depleted SOI transistors, the worstcase bias is not as well defined as for partiallydepleted SOI transistors. Similar to the case for partially-depleted SOI transistors, Jenkins and Liu [48] showed that the TG bias configuration caused the most radiation-induced charge trapping in the buried oxide of some SOI technologies. However, for other technologies, the worst-case bias was determined to be the ON bias configuration [49].…”