Radio frequency bias power effect on surface roughness of silicon carbide plasma etching

Kim, Byungwhan; Kim, Kunho; Lee, Byung Teak

doi:10.1016/s0169-4332(03)00567-1

Cited by 15 publications

(9 citation statements)

References 13 publications

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“…Two other important aspects in plasma etching processes are the surface roughness and the residual damage left after the surface treatment. The surface roughness and residual damage scale with the etch rate and have to be optimized separately [353,354]. The residual etching damage partly remains even after annealing at 1050 • C [354].…”

Section: Gas Chemistrymentioning

confidence: 99%

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Cimalla¹,

Pezoldt²,

Ambacher³

2007

J. Phys. D: Appl. Phys.

350

217

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With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are attracting more attention. Polycrystalline SiC has first been implemented into Si micromachining techniques, mainly as etch stop and protective layers. However, the outstanding properties of wide band gap semiconductors offer many more possibilities for the implementation of new functionalities. Now, a variety of technologies for SiC and group III nitrides exist to fabricate fully wide band gap semiconductor based MEMS. In this paper we first review the basic technology (deposition and etching) for group III nitrides and SiC with a special focus on the fabrication of three-dimensional microstructures relevant for MEMS. The basic operation principle for MEMS with wide band gap semiconductors is described. Finally, the first applications of SiC based MEMS are demonstrated, and innovative MEMS and NEMS devices are reviewed.

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Section: Gas Chemistrymentioning

confidence: 99%

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Cimalla¹,

Pezoldt²,

Ambacher³

2007

J. Phys. D: Appl. Phys.

350

217

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“…According to [ 38 ], surface roughness increased significantly when the applied power was less than 70 W, while a weak roughness appeared on higher applied power. When the applied power was low (30 W and 60 W), the etching process had a more noticeable effect on the treated surface [ 38 , 39 ]. Thus, a significant surface roughness increase was observed.…”

Section: Resultsmentioning

confidence: 99%

Temporary Wettability Tuning of PCL/PDMS Micro Pattern Using the Plasma Treatments

Lin

Razali

2019

Materials

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Surface wettability plays an important role in determining the function of a wound dressing. Dressings with hydrophobic surfaces are suitable for bacterial adsorption, however, a hydrophilic surface is needed to improve cell attachment for most anchorage-dependent cell types. Furthermore, the hydrophobicity/hydrophilicity of the surface can be used to direct cellular processes such as cell initial attachment, adhesion, and migration during wound healing. Thus, a surface with an ability to switch their surface wettability improves the practicality of the dressing. In this study, we propose a temporary surface wettability tuning for surface patterning utilizing plasma treatment. Polycaprolactone (PCL) and polydimethylsiloxane (PDMS) surfaces were treated with tetrafluoromethane (CF4), sulphur hexafluoride (SF6), and oxygen (O2) plasma, and the effects on the surface wettability, roughness, and chemical composition were investigated. Based on the contact angle measurement, CF4 plasma altered surface wettability of PCL and PDMS films to hydrophobic and hydrophilic, respectively. After CF4 treatment, better attachment of primary mouse embryonic fibroblast cell (3T3) was observed on the treated PDMS surface. Embedding PCL into PDMS generated a hydrophobic-hydrophilic pattern mixture surface, which offers great potential in the tissue engineering field such as cell patterning and guidance.

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“…It is a constant component of the electrode voltage, induced in the high-frequency glow discharge and the so-called DC self-bias voltage ( U SB ). The DC self-bias voltage together with plasma potential ( U PP ) are in turn the DC bias voltage ( U DC ) [ 32 ], as it is expressed by the Formula (2):

…”

Section: The Icp-rie Methodsmentioning

confidence: 99%

“…In general, smooth surfaces increase the performance of microelectronic devices, therefore, after etching, the surface roughness should be kept at a minimum [ 12 ]. A low-pressure plasma etching process (~4 mTorr) with a variation in the bias power at fixed plasma conditions can benefit from more anisotropic etch profiles and less plasma damages to the material, which means practically constant surface roughness for different bias power [ 32 ].…”

Section: Etching Of Sic With Different Plasmasmentioning

confidence: 99%

“…The experimental results of the SiC etching process in C 2 F 6 + O 2 plasma indicate a close correlation between the surface morphology of the etched SiC and ( U DC ) [ 32 ]. It was observed that the roughness of the surface obtained in etching process increases when the distance between the plasma source and the etched sample is reduced, and the power of the RF generator as well as U DC are increased [ 32 ]. The surface roughness is also clearly influenced by the temperature of the substrate during etching process.…”

Section: Etching Of Sic With Different Plasmasmentioning

confidence: 99%

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A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

et al. 2021

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The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-RIE method combining a high finishing accuracy and reproducibility is excellent for etching hard materials, such as SiC, GaN or diamond. The paper presents a review of silicon carbide etching—principles of the ICP-RIE method, the results of SiC etching and undesired phenomena of the ICP-RIE process are presented. The article includes SEM photos and experimental results obtained from different ICP-RIE processes. The influence of O2 addition to the SF6 plasma as well as the change of both RIE and ICP power on the etching rate of the Cr mask used in processes and on the selectivity of SiC/Cr etching are reported for the first time. SiC is an attractive semiconductor with many excellent properties, that can bring huge potential benefits thorough advances in submicron semiconductor processing technology. Recently, there has been an interest in SiC due to its potential wide application in power electronics, in particular in automotive, renewable energy and rail transport.

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Radio frequency bias power effect on surface roughness of silicon carbide plasma etching

Cited by 15 publications

References 13 publications

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Temporary Wettability Tuning of PCL/PDMS Micro Pattern Using the Plasma Treatments

A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

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