Raman and photoluminescence investigations of impurities in zinc-rich ZnxCd1−xSe

Gupta, L. R.; Rath, Saroj Kumar; Abbi, S. C.

doi:10.1016/j.mseb.2005.02.048

Cited by 5 publications

(2 citation statements)

References 30 publications

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“…The band I is centered at 1.844 eV with FWHM of 0.162 eV and the band II at 1.705 eV with FWHM of 0.193 eV. As expected the position of the peak energy moves toward lower energy as Cd concentration increases [39].…”

Section: Broadband Region Analysissupporting

confidence: 73%

Photoluminescence spectroscopy and effective concentration determination of Cd_xZn_1−xSe

Sweiti

Medina

Martínez

et al. 2008

Semicond. Sci. Technol.

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A detailed photoluminescence spectrometric analysis near the band edge and broadband characterizations of Cd x Zn 1−x Se, for two nominal concentrations, x = 0.25 and 0.50, was performed at various temperatures from 25 K to room temperature. A photoluminescence approach was used to determine the effective concentrations x = 0.22 and 0.43. The parameters that describe the temperature dependence of energy have been evaluated based on the Varshni and Bose-Einstein models. Two broad bands are observed, a higher energy band I centered at 1.991 and 1.773 eV and a lower energy band II centered at 1.844 and 1.705 eV for the two samples, respectively. The emission bands are attributed to donor-acceptor pair transitions. The energy scheme shows two donors and two acceptor levels, the binding energies of the donors for Cd 0.22 Zn 0.78 Se are 29 and 208 meV, the binding energies of the acceptors are 472 and 511 eV. The binding energies of the donors for Cd 0.43 Zn 0.57 Se are 27 and 137 meV, the binding energies of the acceptors are 393 and 423 meV. A significant blue shift in energy with increasing temperature was observed for the lower energy band. The ionization temperatures for the deep donors are 279 and 287 K for Cd 0.22 Zn 0.78 Se and Cd 0.43 Zn 0.57 Se, respectively.

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Section: Broadband Region Analysissupporting

confidence: 73%

Photoluminescence spectroscopy and effective concentration determination of Cd_xZn_1−xSe

Sweiti

Medina

Martínez

et al. 2008

Semicond. Sci. Technol.

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“…ZnCdSe, ZnSSe, etc.) in low‐dimensional structures is high 4–8 since their lattice constant and optical properties can be changed by varying the composition which gives them advantages over binary compounds (ZnSe, CdSe, CdS).…”

Section: Introductionmentioning

confidence: 99%

Raman scattering characterization of ZnSe/Zn_0.6Cd_0.4Se multilayers prepared by thermal vacuum evaporation

Nesheva

Šćepanović

Aneva

et al. 2012

Physica Status Solidi (a)

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Nanocrystalline multilayers from ZnSe/Zn 0.6 Cd 0.4 Se with three different layer thicknesses (3.5, 5.0, 10.0 nm) and, for comparison, 400 nm thick Zn 0.6 Cd 0.4 Se nanocrystalline single layers have been prepared by thermal evaporation of ZnSe and CdSe in vacuum. Raman scattering spectra have been measured in the range 100-1000 cm À1 under excitation with the 488 and 514.5 nm lines of an Ar þ laser. Series of four bands have been seen in the spectra of all samples. They have been related to replicas of the longitudinal optical LO-phonon in the Zn x Cd 1Àx Se layers and interpreted as an indication for crystallinity of both kinds of samples. A blue shift of the 1 LO maximum has been observed, which has been connected with an increase of the compressive stress in the ternary layers when the layer thickness decreases. It has also been obtained that the ratio of the integrated intensity of the 1 LO band in the spectra taken with the 488 and 514.5 nm lines decreases with decreasing Zn 0.6 Cd 0.4 Se layer thickness. The result has been assigned to size-induced increase of the optical band gap of the layers. This conclusion has been confirmed by spectral photocurrent and optical transmission measurements.

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Compositional dependence of Raman-active mode frequencies and line widths in TlInS2xSe2(1−x) mixed crystals

Guler¹,

Gasanly²

2014

Applied Surface Science

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Raman and photoluminescence investigations of impurities in zinc-rich ZnxCd1−xSe

Cited by 5 publications

References 30 publications

Photoluminescence spectroscopy and effective concentration determination of Cd_xZn_1−xSe

Photoluminescence spectroscopy and effective concentration determination of Cd_xZn_1−xSe

Raman scattering characterization of ZnSe/Zn_0.6Cd_0.4Se multilayers prepared by thermal vacuum evaporation

Compositional dependence of Raman-active mode frequencies and line widths in TlInS2xSe2(1−x) mixed crystals

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Raman and photoluminescence investigations of impurities in zinc-rich ZnxCd1−xSe

Cited by 5 publications

References 30 publications

Photoluminescence spectroscopy and effective concentration determination of CdxZn1−xSe

Photoluminescence spectroscopy and effective concentration determination of CdxZn1−xSe

Raman scattering characterization of ZnSe/Zn0.6Cd0.4Se multilayers prepared by thermal vacuum evaporation

Compositional dependence of Raman-active mode frequencies and line widths in TlInS2xSe2(1−x) mixed crystals

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Product

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Photoluminescence spectroscopy and effective concentration determination of Cd_xZn_1−xSe

Photoluminescence spectroscopy and effective concentration determination of Cd_xZn_1−xSe

Raman scattering characterization of ZnSe/Zn_0.6Cd_0.4Se multilayers prepared by thermal vacuum evaporation