Raman determination of phonon deformation potentials in α-GaN

Demangeot, F.; Frandon, J.; Renucci, M. A.; Briot, Olivier; Gil, Bernard; Aulombard, Roger

doi:10.1016/0038-1098(96)00410-3

Cited by 189 publications

(121 citation statements)

References 9 publications

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“…5 Thus, precise phonon deformation potentials (PDPs), which relate Raman shift or split to stress, 6 are required. Although theoretical 7,8 and experimental works 7,[9][10][11][12][13][14][15] were reported, there is a considerable discrepancy among the reported figures. 9,10,16 This might be due to the conventional comparative experimental methodology, 14 which always faces the challenge of preparing GaN samples with a large range of biaxial stress.…”

Section: Introductioncontrasting

confidence: 40%

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Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

Deng

Wang

et al. 2011

AIP Advances

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In this work, a biaxial stress modulation method, combining the microfabrication technique, finite element analysis and a weighted averaging process, was developed to study piezospectroscopic behavior of hexagonal GaN films, epitaxially grown by metalorganic chemical vapor deposition on c-sapphire and Si (111) substrates. Adjusting the size of patterned islands, various biaxial stress states could be obtained at the island centers, leading to abundant stress-Raman shift data. With the proposed stress modulation method, the Raman biaxial stress coefficients of $E_2^H$E2H and A1 (LO) phonons of GaN were determined to be 3.43 cm-1/GPa and 2.34 cm-1/GPa, respectively.

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Section: Introductioncontrasting

confidence: 40%

“…Combining the calibrated Raman biaxial pressure coefficients determined in the present work and the Raman hydrostatic pressure coefficients, 22,23 it becomes possible to calculate the values of α and β. Two equations could be written for solving the PDPs, 9 i.e.,…”

Section: Resultsmentioning

confidence: 99%

Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

Deng

Wang

et al. 2011

AIP Advances

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“…It was reported that biaxial compressive stress of 1 GPa will shift the A 1 (LO) peak toward a higher wave number by 0.8 cm Ϫ1 . 22 Note that this is a factor of 5 less than the shift of the E 2 (2) mode for the same biaxial stress. As was stated in the previous discussion, the Ga-face domains are 0.15 GPa more compressively stressed than N-face domains.…”

Section: Resultsmentioning

confidence: 97%

Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

Park

Cuomo

Rodriguez

et al. 2003

Journal of Applied Physics

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PublicationThe electronic properties of inversion domains in a GaN-based lateral polarity heterostructure were investigated using micro-Raman spectroscopy. The piezoelectric polarization of each domain was calculated from strain determined via Raman scattering. The free carrier concentration and electron mobility were deduced from the longitudinal optical phonon-plasmon coupled mode. The electron concentration in the N-face domain was slightly higher than that in the Ga-face domain. It appears that during growth, a larger number of donor impurities may have been incorporated into the N-face domain than into the Ga-face domain.

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“…The values of K are still a matter of discussion and vary in different publications [28][29][30]. An overview and discussion is given in the recent work of Wagner and Bechstedt [31].…”

Section: Configurationmentioning

confidence: 99%

Lattice dynamics in GaN and AlN probed with first‐ and second‐order Raman spectroscopy

Haboeck

Siegle

Hoffmann

et al. 2003

phys. stat. sol. (c)

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We present a selection of our contributions to basic research on the lattice dynamical properties of group-III nitrides and their alloys. We used first-order Raman scattering to determine the zone-center phonons and their dependence on structural attributes such as stress, chemical composition, impurities, and doping. Results on the angular dispersion of the polar modes, strain distribution, coupled LO-phonon plasmon modes, multi-mode behavior in Al x Ga 1-x N, and the quantitative determination of the phase purity of cubic and hexagonal GaN are shown. Second-order Raman-scattering experiments on GaN and AlN provide information on the vibrational states throughout the entire Brillouin zone. Based on a comparison of experimental data and calculated phonon-dispersion curves we assigned the observed structures to particular phonon branches and points in the Brillouin zone. We also discuss the behavior of the optical modes under large hydrostatic pressure. 1 Introduction During the last decade group-III nitrides have been an object of increasing research because of their interesting physical properties such as an adjustable band gap (1.9 eV to 6.2 eV) by varying the composition of the alloys [1] and application as basic materials for optoelectronic devices working in the blue and ultraviolet spectral region [2][3][4]. In particular GaN and AlN can withstand high temperatures and have large piezoelectric constants which makes them suitable for applications in highfrequency devices, sensors and low-dimensional structures [5,6].Although basic information about group-III nitrides e.g. crystal-and band structure have been available for a decade several details still remained unclear. In the following review of our work we present results of first-and second-order Raman investigations on various GaN, AlN, and Al x Ga 1-x N samples and point out some remarkable details of the structural and optical properties of these materials.

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Raman determination of phonon deformation potentials in α-GaN

Cited by 189 publications

References 9 publications

Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

Lattice dynamics in GaN and AlN probed with first‐ and second‐order Raman spectroscopy

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