Raman Scattering at Shallow Acceptors in InP

Abstract

Electronic Raman scattering was used to investigate excited states of shallow acceptors in Zn-and in Cd-doped p-type InP with acceptor concentrations in the range between 10 16 cm ± ±3 and 10 18 cm ± ±3 . Well resolved transition lines were obtained for acceptor concentrations of about 10 17 cm ± ±3 (Zn-doped) and 5 Â 10 17 cm ± ±3 (Cd-doped), at higher concentrations the levels merge into broad bands. A linear correlation between the normalized intensity of the electronic spectrum and the acceptor concentration was found. The measured acceptor energy levels were used to prove which sets of published Luttinger parameters g 1 , g 2 and g 3 are compatible with our results.

Magneto-optical far-infrared absorption spectroscopy of the hole states of indium phosphide

“…ERS measurements have reported lines labeled C, 1, and 2, of energies 37.25, 39.51, and 40.99 meV. 10,37 Such energies are not accessible to our technique, lying in the reststrahlen region, which extends from ϳ38 to 44 meV. In this range essentially all photons are reflected.…”

“…In particular, it is not the lines C, 1, or 2, as it corresponds to none of these in energy. 10,37 It cannot be the 2P 1/2 ͑1⌫ 6 − ͒ state ͑see Table II͒; this splits to only four components in field. 31 So we rule out an excited state of Zn as the origin of the series.…”