Raman scattering characterization of titanium silicide formation

Nemanich, R. J.; Fiordalice, R.; Jeon, Hyeongtag

doi:10.1109/3.27991

Cited by 44 publications

(15 citation statements)

References 22 publications

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“…Concerning Ti silicides formation, the Raman results are quite consistent with the XRD results since the other spectral features located at 187, 206 and 242 cm −1 correspond to the formation of TiSi 2 of C54 structure [20]. According to the group theory analysis, the C54 structure exhibits seven Raman active modes, one with A1g character and six with B character [32]. So, the other expected vibrational modes are probably too weak to be detected in our Ti films.…”

Section: Formation Of Tio 2 and Tin Compoundssupporting

confidence: 82%

Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

et al. 2017

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Abstract:The physical properties including the mechanical, optical and electrical properties of Ti nitrides and silicides are very attractive for many applications such as protective coatings, barriers of diffusion, interconnects and so on. The simultaneous formation of nitrides and silicides in Ti films improves their electrical properties. Ti films coated on Si wafers are heated at various temperatures and processed in expanding microwave (Ar-N 2 -H 2 ) plasma for various treatment durations. The Ti-Si interface is the centre of Si diffusion into the Ti lattice and the formation of various Ti silicides, while the Ti surface is the centre of N diffusion into the Ti film and the formation of Ti nitrides. The growth of silicides and nitrides gives rise to two competing processes which are thermodynamically and kinetically controlled. The effect of thickness on the kinetics of the formation of silicides is identified. The metastable C 49 TiSi 2 phase is the main precursor of the stable C 54 TiSi 2 phase, which crystallizes at about 600 • C, while TiN crystallizes at about 800 • C.

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Section: Formation Of Tio 2 and Tin Compoundssupporting

confidence: 82%

Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

et al. 2017

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“…1. The as-deposited sample has a very weak Raman peak at 137 cm 1 , due to the first-order transverse-optical mode of the Ti film, 11 which disappears in the Raman spectrum of the laser-annealed samples, indicating the Ti consumption during laser irradiation and two groups of new peaks observed instead. The peaks at 193, 201 and 242 cm 1 from the Ti/Si samples that underwent laser radiation at 0.6 J cm 2 and a scanning speed of 0.5 mm s 1 can be assigned to the C54 phase, 12 whereas those Ti/Si samples subjected to laser irradiation at 0.6 J cm 2 and a scanning speed of 20 mm s 1 exhibit three Raman peaks at 269, 297 and 333 cm 1 , all of which are attributed to the C49 phase.…”

Section: Resultsmentioning

confidence: 98%

Laser-induced formation of titanium silicides

Chen

Shen

Chen

et al. 1999

Surf. Interface Anal.

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In this article, we report on the laser‐induced formation of both C49 and C54 TiSi2 films with fine grains using Q‐switched Nd : YAG laser irradiation from Ti/Si samples. The films formed were characterized with micro‐Raman spectroscopy, high‐resolution transmission electron microscopy, energy‐dispersive spectrometry and atomic force microscopy. The TiSi2 films synthesized are single‐phased and thin, with fine grains and a smooth film/substrate interface on the atomic scale. The process is likely to proceed via a solid‐state reaction rather than liquid‐phase intermixing. Our results demonstrate the unique advantages of a laser annealing technique and its potential in deep submicron semiconductor technology. Copyright © 1999 John Wiley & Sons, Ltd.

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“…Raman scattering has been used extensively to study silicide formation [3][4][5][6][7][8][9]. Silicides (silicon-metal components) are of importance in microelectronics industry because of their utility as interconnect materials in very large scale integrated (VLSI) circuit fabrication [3].…”

Section: Phasementioning

confidence: 99%